© 2009 IXYS All rights reserved
7-8
20090826a
MUBW 50-17 T8
IXYS reserves the right to change limits, test conditions and dimensions.
0 20 40 60 80 100
0
10
20
30
0 20 40 60 80
0
5
10
15
20
25
30
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 20 40 60 80 100
0
4
8
12
16
20
24
I
C
, I
F
[A]
E
[mJ]
t [ms]
Q
rr
[µC]
Z
thJC
[K/W]
E
on
V
CE
= 900 V
V
GE
= ±15 V
R
G
= 8 Ω
T
VJ
= 125°C
E
off
E
rec
E
[mJ]
R
G
[Ω]
V
CE
= 900 V
V
GE
= ±15 V
R
G
= 8 Ω
T
VJ
= 125°C
I
F
[A]
E
on
E
off
E
rec
single pulse
V
CE
= 900 V
V
GE
= ±15 V
I
C
/I
F
= 50 A
T
VJ
= 125°C
0 30 60 90 120 150
100
1000
10000
T [°C]
R
[Ω]
diode
IGBT
Fig.13Typ.turnonenergy&switchingtimes
versuscollectorcurrent
Fig.14 Typ.turnoffenergyandswitchingtimes
versuscollectorcurrent
Fig.15 Typicalturn-offcharacteristics
offreewheelingdiode
Output Inverter T1 - T6 / D1 - D6
Fig.16 Transientthermalimpedance
junctiontocase
Temperature Sensor NTC
Fig.17Typ.NTCresistancevs.temperature
IGBT Diode
R
i
t
i
R
i
t
i
1 0.0326 0.0014 0.1941 0.0206
2 0.1311 0.0258 0.0542 0.0016
3 0.1492 0.1099 0.2549 0.0930
4 0.1169 0.6361 0.1461 0.5958
