SiHG73N60E
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Vishay Siliconix
S15-0399-Rev. E, 16-Mar-15
4
Document Number: 91482
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Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Temperature vs. Drain-to-Source Voltage
Q
g
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
16
4
0
24
20
12
8
0 60 120 180 240 300 360 420 480
V
DS
= 480 V
V
DS
= 300 V
V
DS
= 120 V
V
SD
, Source-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
T
J
= 150 °C
T
J
= 25 °C
V
GS
= 0 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
0.01
0.1
1
10
100
1000
1 10 100 1000
1 ms
I
DM
Limited
BVDSS Limited
10 ms
100 μs
Limited by R
DS(on)
*
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
Operation in this Area
Limited by R
DS(on)
T
J
, Case Temperature (°C)
I
D
, Drain Current (A)
25 50 75 100 125 150
10
20
30
40
50
60
70
80
0
T
J
, Junction Temperature (°C)
V
DS
, Drain-to-Source
675
600
- 60 0 160
725
Breakdown Voltage (V)
700
650
625
575
- 40 - 20 20 40 60 80 100 120 140
550
750