AT-32063
Low Current, High Performance NPN Silicon Bipolar Transistor
Data Sheet
Features
• High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
• 900 MHz Performance: 1.1 dB NF, 14.5 dB G
A
• Characterized for End-of-Life Battery Use (2.7 V)
• SOT-363 (SC-70) Plastic Package
• Tape-and-Reel Packaging Option Available
• Lead-free
Description
The AT-32063 contains two high performance NPN bipolar
transistors in a single SOT-363 package. The devices are
unconnected, allowing exibility in design. The pin-out
is convenient for cascode amplier designs. The SOT-363
package is an industry standard plastic surface mount
package.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of the transistor yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter nger interdigitated geometry
yields a transistor that is easy to match to and extremely
fast, with moderate power, low noise resistance, and low
operating currents.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated
systems as an LNA, gain stage, buer, oscillator, or active
mixer. Typical amplier designs at 900 MHz yield 1.3 dB
noise gures with 12 dB or more associated gain at a 2.7
V, 5 mA bias, with noise performance being relatively
insensitive to input match. High gain capability at 1 V, 1
mA makes this device a good t for 900 MHz pager ap-
plications. Voltage breakdowns are high enough for use
at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz f
t
, 30 GHz f
max
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device unifor-
mity, performance and reliability are produced by the use
of ion-implantation, self-alignment techniques, and gold
metallization in the fabrication of these devices.
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and Package Marking
B
1
1
E
1
2
C
2
3
C
1
6
E
2
5
B
2
4
