TSM4N90
Taiwan Semiconductor
Document Number: DS_P0000109 1 Version: C15
N-Channel Power MOSFET
900V, 4A, 4.0Ω
FEATURES
● Low R
DS(ON)
4Ω (Max.)
● Low gate charge typical @ 25nC (Typ.)
● Improve dV/dt capability
KEY PERFORMANCE PARAMETERS
PARAMETER VALUE UNIT
V
DS
900 V
R
DS(on)
(max) 4 Ω
Q
g
25 nC
APPLICATION
● High efficiency switch mode power Supply
● Lighting
Notes: Moisture sensitivity level: level 3. Per J-STD-020
(T
A
= 25°C unless otherwise noted)
PARAMETER SYMBOL TO-220
ITO-220
UNIT
Drain-Source Voltage V
DS
900 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current
(Note 1)
T
C
= 25°C
I
D
4 4*
A
T
C
= 100°C 2.2 2.2*
Pulsed Drain Current
(Note 2)
I
DM
16 16 * A
Total Power Dissipation @ T
C
= 25°C P
DTOT
123 38.7 W
Single Pulsed Avalanche Energy
(Note 3)
E
AS
474 mJ
Single Pulsed Avalanche Current
(Note 3)
I
AS
4 A
Repetitive Avalanche Energy
(Note 2)
E
AR
12.3 mJ
Peak Diode Recovery
(Note 7)
dV/dt 4.5 V
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
THERMAL PERFORMANCE
PARAMETER SYMBOL TO-220
ITO-220
UNIT
Junction to Case Thermal Resistance R
ӨJC
1.01 3.23 °C/W
Junction to Ambient Thermal Resistance R
ӨJA
62.5 °C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
