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NRVBSS26T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
June, 2017 − Rev. 6
1 Publication Order Number:
SS26/D
SS26T3G, NRVBSS26T3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal−to−silicon
power rectifier. Features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high
frequency switching power supplies; free wheeling diodes and
polarity protection diodes.
Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Overvoltage Protection
• Low Forward Voltage Drop
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• Pb−Free Package is Available
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL 94, V−O at 0.125 in
• Weight: 95 mg (approximately)
• Cathode Polarity Band
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix
to Part Number
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• ESD Ratings: Human Body Model = 3B
Machine Model = C
• Marking: SS26
Device Package Shipping
†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
60 VOLTS
MARKING DIAGRAM
www.onsemi.com
SS26T3G SMB
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NRVBSS26T3G* SMB
(Pb−Free)
2500 / Tape & Reel
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
SS26 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
SMB
CASE 403A
AYWW
SS26G
G
SS26T3G, NRVBSS26T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60 V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 95°C)
I
O
2.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60
Hz)
I
FSM
40 A
Storage/Operating Case Temperature T
stg
, T
C
−55 to +150 °C
Operating Junction Temperature T
J
−55 to +150 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
R
q
JL
R
q
JA
24
80
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol
Value
Unit
T
J
= 25°C T
J
= 125°C
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 1.0 A)
(i
F
= 2.0 A)
v
F
0.51
0.63
0.475
0.55
V
Maximum Instantaneous Reverse Current (Note 3)
(V
R
= 60 V)
I
R
0.2 20 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
SS26T3G, NRVBSS26T3G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
Figure 3. Typical Reverse Current
I
R
, REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance
10 3002040
10
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
50 60
100
25°C
f = 1 MHz
T
A
= 75°C
T
A
= 25°C
T
A
= 125°C
0.1
1
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
T
A
= 150°C
T
A
= −40°C
0.1
1
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.
8
T
A
= 125°C
T
A
= 75°C
T
A
= 150°C
T
A
= 25°C
T
A
= −40°C
0 102030405060
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
T
A
= 150°C
T
A
= 125°C
T
A
= 75°C
T
A
= 25°C
Figure 5. Current Derating − Junction to Lead
I
F
, AVERAGE FORWARD CURRENT (A)
T
L
, LEAD TEMPERATURE (°C)
Figure 6. Forward Power Dissipation
0.5 1.501 2
0
0.2
P
FO
, AVERAGE POWER DISSIPATION (W)
I
O
, AVERAGE FORWARD CURRENT (A)
0.4
0.6
2.5 3
1
1.8
2
0.8
1.2
1.4
1.6
dc
SQUARE WAVE
0
0.5
1
1.5
2
2.5
3
3.5
60 70 80 90 100 110 120 130 140 150
dc
SQUARE WAVE
R
q
JL
= 24°C/W
P1-P3P4-P5

NRVBSS26T3G

Mfr. #:
Buy NRVBSS26T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers AUTO STANDARD OF SS2
Lifecycle:
New from this manufacturer.
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