©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
PN5134
Absolute Maximum Ratings* T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 10 V
V
CBO
Collector-Base Voltage 20 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Collector Current - Continuous 500 mA
T
J,
T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 10mA, I
B
= 0 10 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10µA, I
E
= 0 20 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 3.5 V
V
(BR)CES
Collector-Emitter Breakdown Voltage I
C
= 10µA20V
I
CBO
Collector Cut-off Current V
CB
= 15V, I
E
= 0, T
A
= 65°C10µA
I
CES
Collector Cutoff Current V
CB
= 15V, I
C
= 0 0.4 µA
On Characteristics
h
FE
DC Current Gain V
CE
= 1.0V, I
C
= 10mA
V
CE
= 0.4V, I
C
= 30mA
20
15
150
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 10mA, I
B
= 1.0mA
I
C
= 10mA, I
B
= 3.3mA
0.25
0.20
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 10mA, I
B
= 1.0mA
I
C
= 10mA, I
B
= 3.3mA
0.70
0.72
0.9
1.1
V
V
Small Signal Characteristics
C
ob
Output Capacitance V
CB
= 5.0V, f = 1.0MHz 4.0 pF
h
fe
Small Signal Current Gain I
C
= 10mA, V
CE
= 10V, f = 100MHz 2.5
Switching Characteristics
t
s
Storage Time I
C
= I
B1
= I
B2
= 15mA 18 ns
t
on
Turn-on Time V
CC
= 3.0V, I
C
= 10mA
I
B1
= 3.3mA
18 ns
t
d
Delay Time 14 ns
t
r
Rise Time 12 ns
t
off
Turn-off Time V
CC
= 3.0V, I
C
= 10mA
I
B1
= I
B2
= 3.3mA
18 ns
t
s
Storage Time 13 ns
t
f
Fall Time 13
ns
PN5134
NPN General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
1. Emitter 2. Base 3. Collector
TO-92
1
