Characteristics STTH16L06C-Y
2/9 DocID026936 Rev 2
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
Δ T
j
(diode1)
= P
(diode1)
x R
th(j-c) (per diode)
+ P
(diode2)
x R
th(c)
To evaluate the maximum conduction losses use the following equation:
P = 1.06 x I
F(AV)
+ 0.036 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage, T
j
= -40 °C 600 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current δ = 0.5 TO-220AB
T
c
= 140 °C Per diode 8
A
T
c
= 135 °C Per device 16
T
c
= 130 °C Per diode 10
T
c
= 120 °C Per device 20
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms sinusoidal 120 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Operating junction temperature -40 to +175 °C
Table 3. Thermal parameter
Symbol Parameter Maximum Unit
R
th(j-c)
Junction to case
TO-220AB Per diode 2.5
°C/WTO-220AB Total 1.6
R
th(c)
Coupling TO-220AB 0.7
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
8
µA
T
j
= 150 °C 25 240
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 8A
1.8
V
T
j
= 150 °C 1.05 1.35
T
j
= 25 °C
I
F
= 16A
2.08
T
j
= 150 °C 1.28 1.64
