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MBR0520LT1G

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 6
1 Publication Order Number:
MBR0520LT1/D
MBR0520LT1G,
SBR80520LT1G,
MBR0520LT3G,
SBR80520LT3G
Preferred Devices
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
The Schottky Power Rectifier employs the Schottky Barrier
principle with a barrier metal that produces optimal forward voltage
drop−reverse current tradeoff. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package provides an alternative to the
leadless 34 MELF style package. These state−of−the−art devices have
the following features:
Features
Guardring for Stress Protection
Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25C)
125C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
AEC−Q101 Qualified and PPAP Capable
SBR8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
ESD Ratings:
Human Body Model = 3B
Machine Model = C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
B2 = Device Code
M = Date Code
G = Pb−Free Package
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES, 20 VOLTS
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
MBR0520LT1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel **
MBR0520LT3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel ***
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
SBR80520LT1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel **
SBR80520LT3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel ***
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
B2 MG
G
1
MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 V
Average Rectified Forward Current
(Rated V
R
, T
L
= 90C)
I
F(AV)
0.5
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
5.5
A
Storage Temperature Range T
stg
−65 to +150 C
Operating Junction Temperature T
J
−65 to +125 C
Voltage Rate of Change (Rated V
R
) dv/dt 1000
V/ms
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance; Junction−to−Ambient (Note 1)
R
q
JA
206 C/W
Thermal Resistance; Junction−to−Lead
R
q
JL
150 C/W
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
v
F
T
J
= 25C T
J
= 100C
V
(i
F
= 0.1 Amps)
(i
F
= 0.5 Amps)
0.300
0.385
0.220
0.330
Maximum Instantaneous Reverse Current (Note 2)
I
R
T
J
= 25C T
J
= 100C
mA
(V
R
= 10 V)
(Rated DC Voltage = 20 V)
75 mA
250 mA
5 mA
8 mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G
http://onsemi.com
3
I
R
, REVERSE CURRENT (A)
1
0.1
0.01
0.1 0.2 0.3 0.4 0.5
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS
)
T
J
= 100C
75C 25C -25C
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
10,000
1000
100
010152025
75C
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
5
200
0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
510152025
150
100
0
C, CAPACITANCE (pF)
50
10
1
0.01
010152025
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Reverse Current
5
100
0.1
-25C
T
J
= +25C
T
J
= 100C
I
R
, REVERSE CURRENT (A)
1
0.875
0
LEAD TEMPERATURE (C)
Figure 5. Current Derating (Lead)
67
0.75
0.625
0.5
60
0.125
0.25
0.375
DC
= p = SQUARE WAVE
10
74 81 88
AVERAGE FORWARD CURRENT (AMP)
0.35
0.315
0
I
F(AV)
, AVERAGE FORWARD CURRENT (AMP)
Figure 6. Power Dissipation
0.125
0.28
0.245
0.21
0
0.105
0.14
0.175
DC
SQUARE
WAVE
p
5
10
0.035
0.07
0.25 0.375 0.5 0.625 0.75 0.875 1
P
F(AV)
, AVERAGE POWER DISSIPATION (WATT)
10295 109 116 123 130
20
T
J
= 125C
I
PK
I
AV
+20
5
I
PK
I
AV
P1-P3P4-P4

MBR0520LT1G

Mfr. #:
Buy MBR0520LT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 0.5A 20V
Lifecycle:
New from this manufacturer.
Delivery:
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