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BGS8358Z

P1-P3P4-P6P7-P9P10-P12
BGS8358 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 4 of 12
NXP Semiconductors
BGS8358
WLAN LNA + Switch
9. Limiting values
[1] According to ANSI/ESDA/JEDEC standard JS-001.
[2] According to JEDEC standard JESD22-C101.
10. Recommended operating conditions
[1] V
IH
is the result of an input voltage on that specific pin between 1.8 V and V
CC
0.2 V and 3.6 V maximum.
11. Thermal characteristics
V
TX
6 transmit mode control
GND 7, exposed die pad ground
TX 8 transmit input
Table 4. Pin description
…continued
Symbol Pin Description
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.3 6 V
I
CC
supply current worst case up to P1dB - 21 mA
V
I(VRX)
input voltage on pin VRX see Figure 1 0.3 4 V
V
I(VTX)
input voltage on pin VTX see Figure 1 0.3 4 V
V
I(LNA_EN)
input voltage on pin LNA_EN 0.3 4 V
P
i(ANT)
input power-on pin ANT high gain receive mode - 7 dBm
bypass receive mode - 19 dBm
P
i(TX)
input power-on pin TX CW; transmit mode - 33 dBm
T
amb
ambient temperature 40 +85 C
T
stg
storage temperature 40 +150 C
T
j
junction temperature 40 +150 C
V
ESD
electrostatic discharge voltage human body model
[1]
- 2000 V
charged device model
[2]
- 500 V
Table 6. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
f frequency 4900 - 5925 MHz
V
CC
supply voltage 2.7 3.3 5.25 V
V
IH
HIGH-level input voltage
[1]
1.8 - 3.6 V
V
IL
LOW-level input voltage 0 - +0.4 V
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient 250 K/W
BGS8358 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 5 of 12
NXP Semiconductors
BGS8358
WLAN LNA + Switch
12. Characteristics
[1] See Table 10 for the appropriate control signal settings.
[2] From any of three operating modes to another and from 10 % or 90 % of control signal edge to 90 % output level.
Table 8. DC Characteristics
V
CC
= 3.3 V; T
amb
= 25 C; 50 load, unless otherwise specified. All measurements done on application board (decoupling
capacitor 100 nF placed near to V
CC
pin 5) with SMA connectors as reference plane.
Symbol Parameter Conditions Min Typ Max Unit
I
CC
supply current high gain receive mode
[1]
- 9.5 12.5 mA
bypass receive mode
[1]
-815A
transmit mode
[1]
- 150 300 A
standby mode
[1]
-815A
I
ctrl(LNA_EN)
control current on pin LNA_EN - 20 30 A
t
on
turn-on time
[2]
- - 400 ns
t
off
turn-off time
[2]
- - 400 ns
Table 9. RF Characteristics
V
CC
= 3.3 V; T
amb
= 25 C; 50 load, unless otherwise specified. All measurements done on application board (decoupling
capacitor 100 nF placed near to V
CC
pin 5) with SMA connectors as reference plane.
Symbol Parameter Conditions Min Typ Max Unit
RF performance at ANT-RX path in high-gain receive mode
[1]
G
tr
transducer power gain 10 12.5 15 dB
G
p(flat)
power gain flatness peak-to-peak over any 80 MHz band - - 0.5 dB
NF noise figure - 2.3 - dB
P
i(1dB)
input power at 1 dB gain compression in-band - 0 - dBm
IP3
i
input third-order intercept point 20 MHz tone spacing;
P
i
= 20 dBm in band
- 10 - dBm
RL
in
input return loss - 12 - dB
RL
out
output return loss - 10 - dB
RF performance at ANT-RX path in bypass receive mode
[1]
G
tr
transducer power gain 11.5 8 6dB
G
p(flat)
power gain flatness peak-to-peak over any 80 MHz band - - 0.5 dB
P
i(1dB)
input power at 1 dB gain compression in-band - 13 - dBm
IP3
i
input third-order intercept point 20 MHz tone spacing;
P
i
= 3 dBm in band
- 27 - dBm
RL
in
input return loss absolute value of the S
11
parameter - 8 - dB
RL
out
output return loss absolute value of the S
22
parameter - 10 - dB
BGS8358 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 4 — 18 January 2017 6 of 12
NXP Semiconductors
BGS8358
WLAN LNA + Switch
[1] See Table 10 for the appropriate control signal settings.
13. Application information
RF performance at ANT-TX path in transmit mode
[1]
ins
insertion loss - 0.75 - dB
G
p(flat)
power gain flatness peak-to-peak over any 80 MHz band - - 0.2 dB
ISL isolation measured between pin RX and pin TX 28 - - dB
P
i(1dB)
input power at 1 dB gain compression in-band - 32 - dBm
RL
in
input return loss - 15 - dB
RL
out
output return loss - 20 - dB
Table 9. RF Characteristics
…continued
V
CC
= 3.3 V; T
amb
= 25 C; 50 load, unless otherwise specified. All measurements done on application board (decoupling
capacitor 100 nF placed near to V
CC
pin 5) with SMA connectors as reference plane.
Symbol Parameter Conditions Min Typ Max Unit
Table 10. Control signal truth table
Other modes than the ones given in this table are not allowed.
Control signal setting
[1]
Mode of operation Mode name
V
RX
V
TX
LNA_EN SP2T switch LNA
(pin 2) (pin 6) (pin 4) ANT-RX ANT-TX
HIGH LOW HIGH ON OFF ON high-gain receive mode
HIGH LOW LOW ON OFF OFF bypass receive mode
LOW HIGH LOW OFF ON OFF transmit mode
LOW LOW LOW OFF OFF OFF standby mode
Fig 3. Application information
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P1-P3P4-P6P7-P9P10-P12

BGS8358Z

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Manufacturer:
NXP Semiconductors
Description:
RF Amplifier BGS8358/HX2SON8///REEL 7 Q2 NDP
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