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NSVMUN2212T1G

P1-P3P4-P6P7-P9P10-P12
MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3
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4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBC124EF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
− − 500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
− − 0.2
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
60 100 −
Collector−Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
− − 0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 1.2 0.8
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 5.0 mA)
V
i(on)
2.5 1.6 −
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 15.4 22 28.6
kW
Resistor Ratio R
1
/R
2
0.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3
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5
TYPICAL CHARACTERISTICS
MUN2212, MMUN2212L, NSVMMUN2212LT1G, MUN5212, DTC124EE, DTC124EM3
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
25°C
−25°C
100
10
1 100
75°C
25°C
100
0
V
in
, INPUT VOLTAGE (V)
10
1
0.1
0.01
0.001
246810
T
A
= −25°C
0
I
C
, COLLECTOR CURRENT (mA)
100
T
A
= −25°C
75°C
10
1
0.1
10 20 30 40 50
Figure 6. Input Voltage vs. Output Current
0.001
T
A
= −25°C
75°C
25°C
0.01
0.1
1
40
I
C
, COLLECTOR CURRENT (mA)
0
20 50
50
010203040
1.6
0.8
0
V
R
, REVERSE VOLTAGE (V)
I
C
/I
B
= 10
V
CE
= 10 V
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
0.4
1.2
2.0
2.4
2.8
3.2
C
ob
, OUTPUT CAPACITANCE (pF)
V
in
, INPUT VOLTAGE (V)
25°C
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3
www.onsemi.com
6
TYPICAL CHARACTERISTICS − NSBC124EF3
Figure 7. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
100
1
0.1
40 50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
1
0.1
0.01
02040
50
I
C
, COLLECTOR CURRENT (mA)
1000
100
1
0.1 10 10
0
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input Voltage
100
10
1
0.1
0.01
02 64
V
in
, INPUT VOLTAGE (V)
816
Figure 11. Input Voltage vs. Output Current
50
010 203040
0.4
1.2
0
V
R
, REVERSE VOLTAGE (V)
30
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
/I
B
= 10
−55°C
25°C
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
0.8
1.6
2.0
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
10
150°C
−55°C
25°C
150°C
1
10
10
−55°C
25°C
150°C
−55°C
25°C
150°C
10 12 14
P1-P3P4-P6P7-P9P10-P12

NSVMUN2212T1G

Mfr. #:
Buy NSVMUN2212T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SS SC59 BR XSTR PNP PBFR
Lifecycle:
New from this manufacturer.
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