MMBT3904

MMBT3904

SMALL SIGNAL NPN TRANSISTOR

PRELIMINARY DATA

■ SILICON EPITAXIAL PLANAR NPN

TRANSISTOR

■ MINIATURE SOT-23 PLASTIC PACKAGE

FOR SURFACE MOUNTING CIRCUITS

■ TAPE AND REEL PACKING

■ THE PNP COMPLEMENTARY TYPE IS

MMBT3906

APPLICATIONS

■ WELL SUITABLE FOR PORTABLE

EQUIPMENT

■ SMALL LOAD SWITCH TRANSISTOR WITH

HIGH GAIN AND LOW SATURATION

VOLTAGE

®

INTERNAL SCHEMATIC DIAGRAM

June 2002

SOT-23

Type Marking

MMBT3904 34

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage (I

E

= 0) 60 V

V

CEO

Collector-Emitter Voltage (I

B

= 0) 40 V

V

EBO

Emitter-Base Voltage (I

C

= 0) 6 V

I

C

Collector Current 200 mA

P

tot

Total Dissipation at T

C

= 25

o

C 350 mW

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

1/4

THERMAL DATA

R

thj-amb

• Thermal Resistance Junction-Ambient Max 357.1

o

C/W

• Device mounted on a PCB area of 1 cm

2

ELECTRICAL CHARACTERISTICS (T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CEX

Collector Cut-off

Current (V

BE

= -3 V)

V

CE

= 30 V 50 nA

I

BEX

Base Cut-off Current

(V

BE

= -3 V)

V

CE

= 30 V 50 nA

V

(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(I

B

= 0)

I

C

= 1 mA 40 V

V

(BR)CBO

Collector-Base

Breakdown Voltage

(I

E

= 0)

I

C

= 10 µA

60 V

V

(BR)EBO

Emitter-Base

Breakdown Voltage

(I

C

= 0)

I

E

= 10 µA

6V

V

CE(sat)

∗ Collector-Emitter

Saturation Voltage

I

C

= 10 mA I

B

= 1 mA

I

C

= 50 mA I

B

= 5 mA

0.2

0.2

V

V

V

BE(sat)

∗ Base-Emitter

Saturation Voltage

I

C

= 10 mA I

B

= 1 mA

I

C

= 50 mA I

B

= 5 mA 0.65

0.85

0.95

V

V

h

FE

∗ DC Current Gain I

C

= 0.1 mA V

CE

= 1 V

I

C

= 1 mA V

CE

= 1 V

I

C

= 10 mA V

CE

= 1 V

I

C

= 50 mA V

CE

= 1 V

I

C

= 100 mA V

CE

= 1 V

60

80

100

60

30

300

f

T

Transition Frequency I

C

= 10 mA V

CE

= 20 V f = 100 MHz 250 270 MHz

C

CBO

Collector-Base

Capacitance

I

E

= 0 V

CB

= 10 V f = 1 MHz 4 pF

C

EBO

Emitter-Base

Capacitance

I

C

= 0 V

EB

= 0.5 V f = 1MHz 18 pF

NF Noise Figure V

CE

= 5 V I

C

= 0.1 mA f = 10 Hz

to 15.7 KHz R

G

= 1 KΩ

5dB

t

d

t

r

Delay Time

Rise Time

I

C

= 10 mA I

B

= 1 mA

V

CC

= 30 V

35

35

ns

ns

t

s

t

f

Storage Time

Fall Time

I

C

= 10 mA I

B1

= -I

B2

= 1 mA

V

CC

= 30 V

200

50

ns

ns

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

MMBT3904

2/4

DIM.

mm mils

MIN. TYP. MAX. MIN. TYP. MAX.

A 0.85 1.1 33.4 43.3

B 0.65 0.95 25.6 37.4

C 1.20 1.4 47.2 55.1

D 2.80 3 110.2 118

E 0.95 1.05 37.4 41.3

F 1.9 2.05 74.8 80.7

G2.1 2.582.6 98.4

H 0.38 0.48 14.9 18.8

L0.3 0.611.8 23.6

M 0 0.1 0 3.9

N 0.3 0.65 11.8 25.6

O 0.09 0.17 3.5 6.7

0044616/B

SOT-23 MECHANICAL DATA

MMBT3904

3/4

MMBT3904

Mfr. #:

Manufacturer:

Rectron

Description:

Bipolar Transistors - BJT SOT23 NPN 0.2A 40V G enPur

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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MMBT3904