PN3569_D75Z

©2003 Fairchild Semiconductor Corporation Rev. A, November 2003
PN3569
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
Thermal Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 80 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 500 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Sustaining Voltage * I
C
= 30µA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
E
= 0 80
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5.0 V
I
CBO
Collector Cutoff Current V
CB
= 40V, I
E
= 0 50 nA
I
EBO
Emitter Cut-off Current V
EB
= 4.0V, I
C
= 0 25 nA
On Characteristics
h
FE
DC Current Gain V
CE
= 1V, I
C
= 150mA
V
CE
= 1V, I
C
= 30mA
100
100
300
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 150mA, I
B
= 15mA 0.25 V
V
BE
(on) Base-Emitter On Voltage I
C
= 150mA, V
CE
= 1V 1.1 V
Small Signal Characteristics
h
fe
Small Signal current Gain I
C
= 50mA, V
CE
= 10V, f = 10MHz 3.0 30
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 °C/W
PN3569
NPN General Purpose Amplifier
This device is designed for use at general purpose amplifiers and
switches requiring collecor currents to 300mA.
TO-92
1. Emitter 2. Base 3. Collector
1
Package Dimensions
PN3569
Dimensions in Millimeters
Rev. A, November 2003©2003 Fairchild Semiconductor Corporation
0.46
±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27
±0.20
]
1.27TYP
[1.27
±0.20
]
3.60
±0.20
14.47
±0.40
1.02
±0.10
(0.25)
4.58
±0.20
4.58
+0.25
–0.15
0.38
+0.10
–0.05
0.38
+0.10
–0.05
TO-92
©2003 Fairchild Semiconductor Corporation Rev. I5
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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PN3569_D75Z

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 40V 0.5A TO-92
Lifecycle:
New from this manufacturer.
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