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MBR8060R

P1-P2
V
RRM
= 20 V - 100 V
I
F
= 80 A
Features
• High Surge Capability DO-5 Package
• Types up to 100 V V
RRM
Parameter Symbol MBR8045 (R) MBR8060 (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
45 60 V
Silicon Power
Schottk
y
Diode
MBR8045 thru MBR80100R
MBR80100 (R)
80
MBR8080 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
100
pp g
RMS reverse voltage
V
RMS
32 42 V
DC blocking voltage
V
DC
45 60 V
Continuous forward current
I
F
80 80 A
Operating temperature
T
j
-65 to 150 -65 to 150 °C
Storage temperature
T
stg
-65 to 175 -65 to 175 °C
Parameter Symbol MBR8045 (R) MBR8060(R) Unit
Diode forward voltage 0.65 0.75
55
250 250
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.0 1.0 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
250
A1000
V
R
= 20 V, T
j
= 25 °C
I
F
= 80 A, T
j
= 25 °C
T
C
≤ 120 °C
Conditions
50
1000 1000
-65 to 175
80 80
1000
-65 to 175
MBR80100 (R)
55
MBR8080 (R)
1.0
V
R
= 20 V, T
j
= 125 °C
1.0
0.84 0.84
250
mA
V
-65 to 150 -65 to 150
T
C
= 25 °C, t
p
= 8.3 ms
70
10080
www.genesicsemi.com
1
MBR8045 thru MBR80100R
www.genesicsemi.com
2
P1-P2

MBR8060R

Mfr. #:
Buy MBR8060R
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 60V - 80A Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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