BGU8019 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2017. All rights reserved.
Product data sheet Rev. 3 — 18 January 2017 3 of 18
NXP Semiconductors
BGU8019
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass
4. Marking
5. Limiting values
[1] Stressed with pulses of 200 ms in duration, with application circuit as in Figure 1.
[2] Warning: due to internal ESD diode protection, the applied DC voltage shall not exceed V
CC
+ 0.6 V and shall not exceed 5.0 V in order
to avoid excess current.
[3] The RF input and RF output are AC coupled through internal DC blocking capacitors.
6. Recommended operating conditions
7. Thermal characteristics
Table 4. Marking codes
Type number Marking code
BGU8019 A
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Absolute Maximum Ratings are given as Limiting Values of stress conditions during operation, that must not be exceeded
under the worst probable conditions.
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled
[1]
0.5 +5.0 V
V
I(ENABLE)
input voltage on pin ENABLE V
I(ENABLE)
< V
CC
+ 0.6 V
[1][2]
0.5 +5.0 V
V
I(RF_IN)
input voltage on pin RF_IN DC, V
I(RF_IN)
< V
CC
+0.6 V
[1][2][3]
0.5 +5.0 V
V
I(RF_OUT)
input voltage on pin RF_OUT DC, V
I(RF_OUT)
< V
CC
+ 0.6 V
[1][2][3]
0.5 +5.0 V
P
i
input power
[1]
-10dBm
P
tot
total power dissipation T
sp
130 C-55mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
V
ESD
electrostatic discharge voltage Human Body Model (HBM) According to
ANSI/ESDA/JEDEC standard JS-001
- 2kV
Charged Device Model (CDM) According to
JEDEC standard JESD22-C101C
- 1kV
Table 6. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.5 - 3.1 V
T
amb
ambient temperature 40 +25 +85 C
V
I(ENABLE)
input voltage on pin ENABLE OFF state - - 0.3 V
ON state 0.8 - - V
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 225 K/W