IRFL9110, SiHFL9110
www.vishay.com
Vishay Siliconix
S14-1686-Rev. F, 18-Aug-14
1
Document Number: 91196
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
Marking code: FF
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
•P-channel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infrared, or wave soldering techniques. Its
unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= -25 V, starting T
J
= 25 °C, L = 7.7 mH, R
g
= 25 , I
AS
= -4.4 A (see fig. 12).
c. I
SD
-4.4 A, dI/dt -75 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) -100
R
DS(on)
()V
GS
= -10 V 1.2
Q
g
(Max.) (nC) 8.7
Q
gs
(nC) 2.2
Q
gd
(nC) 4.1
Configuration Single
SOT-223
G
D
S
D
Available
ORDERING INFORMATION
Package SOT-223 SOT-223
Lead (Pb)-free and Halogen-free SiHFL9110-GE3 SiHFL9110TR-GE3
a
Lead (Pb)-free
IRFL9110PbF IRFL9110TRPbF
a
SiHFL9110-E3 SiHFL9110T-E3
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at - 10 V
T
C
= 25 °C
I
D
-1.1
AT
C
= 100 °C -0.69
Pulsed Drain Current
a
I
DM
-8.8
Linear Derating Factor 0.025
W/°C
Linear Derating Factor (PCB Mount)
e
0.017
Single Pulse Avalanche Energy
b
E
AS
100 mJ
Avalanche Current
a
I
AR
-1.1 A
Repetitive Avalanche Energy
a
E
AR
0.31 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
3.1
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 2.0
Peak Diode Recovery dV/dt
c
dV/dt -5.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300
