www.vishay.com Document Number: 91066
4 S11-1050-Rev. D, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1
1
10
2
10
3
10
2
91066_05
C, Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
10
10
5
10
4
10
3
91066_06
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
10
40
30
20
I
D
= 8.0 A
V
DS
= 100 V
V
DS
= 250 V
For test circuit
see figure 13
V
DS
= 400 V
91066_07
V
GS
= 0 V
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
10
2
10
1
0.1
0.2
0.5 0.8
1.4
1.1
T
J
= 25 °C
T
J
= 150 °C
10
2
91066_08
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
1
0.1
10
4
10
10
3
10
2
