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APDS-9101-L21

P1-P3P4-P5
1
APDS-9101
Integrated Reective Sensor
Data Sheet
Description
APDS-9101 is a low cost, integrated reective sensor that
is designed to provide high switching speed for object
detection or proximity sensing applications. It is an inte-
grated module that specially incorporates an infrared LED
and a phototransistor in a single integrated module.
Application Support Information
The Application Engineering Group is available to assist
you with the application design associated with APDS-
9101. You can contact them through your local sales rep-
resentatives for additional details
Ordering Information
Part Number Packaging Type Package Quantity
APDS-9101-L21 Tape and Reel 4-pins SMD package 8000
Features
• Fast Switching Speed
• Detection distance from near zero to 12mm
• Low cost and 4 pin SMD package
Height – 6.3 mm
Width – 4.5 mm
Depth - 8.7 mm
• Operating temperature : -25˚C to 85˚C
• Lead-free and RoHS Compliant
Applications
APDS-9101 is widely suitable to provide reective object/
postion detection or high speed non-contact switching
applications in industrial, consumer and other markets.
• Industrial – Automatic vending machines, amusement/
gaming machines, coin/bill validators etc
• Oce automation – Printers, Copiers etc
• Consumer – Coee machines, beverage dispensing
machines etc
2
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Max Rating Unit
Input Diode
Power Dissipation P
D
90 mW
Peak Forward Current
(300pps, 10 μs pulse)
I
CP
1 A
Continuous Forward Current I
F
60 mA
Reverse Voltage V
R
5 V
Output Phototransistor
Power Dissipation P
C
100 mW
Collector-Emitter Voltage V
CEO
30 V
Emitter-Collector Voltage V
ECO
5 V
Collector Current I
C
20 mA
Operating Temperature Range T
OP
-25˚C to +85˚C
Storage Temperature Range T
STG
-40˚C to 100˚C
Lead Soldering Termperature
(1.6mm(0.063 ” ) Form Case)
T
S
260˚C for 5
seconds
Electrical / Optical Characteristics (Ta=25˚C)
Parameter Symbol Min. Typ. Max. Unit Test Condition
Input Diode
Forward Voltage V
F
1.2 1.6 V I
F
=20mA
Reverse Current I
R
100 μA V
R
= 5V
Output Phototransistor
Collector-Emitter Dark Current I
CEO
100 nA V
CE
= 10V
Coupler
Collector-Emitter Saturation Voltage V
CE(SAT)
0.4 V I
C
= 0.5mA
I
F
= 20mA
On State Collector Current I
C(ON)
750 1150 μA V
CE
= 5V, I
F
= 20mA
D = 3.5mm
(90% Reective White Paper)
BIN A
I
C(ON)
1090 1430 μA BIN B
I
C(ON)
1370 1770 μA BIN C
Response Time (Rise Time) T
R
3 15 μs V
CE
= 5V, I
C
= 2mA
R
L
= 100Ω
Response Time(Fall Time) T
F
4 20 μs
3
APDS-9101 Block Diagram
Pin 2
Pin 4
Pin 1
Pin 3
NOTES:
1. All dimensions are in millimeters(inches)
2. Tolerance is ± 0.25mm(0.010”) unless otherwise noted
I/O Pins Conguration Table
The electrical pin assignments are depicted in the below
table.
Pin Function Description
1 Anode Led Anode
2 Cathode Led Cathode
3 Collector Phototransistor Collector
4 Emitter Phototransistor Emitter
APDS-9101 Package Outline
P1-P3P4-P5

APDS-9101-L21

Mfr. #:
Buy APDS-9101-L21
Manufacturer:
Broadcom / Avago
Description:
Phototransistors Reflective P-Sensor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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