SD103C-TAP

SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 09-Dec-15
1
Document Number: 85754
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diodes
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
Other applications are click suppression,
efficient full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage battery
systems
These diodes are also available in the SOD-123 and
SOD-323 case with type designations SD103AW(S) to
SD103CW(S), and in the MiniMELF case with type
designations LL103A thru LL103C
For general purpose applications
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
HF-detector
Protection circuit
Small battery charger
AC/DC, DC/DC converters
Note
(1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Note
(1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
SD103A V
R
= 40 V SD103A-TR or SD103A-TAP SD103A Single diode Tape and reel/ammopack
SD103B V
R
= 30 V SD103B-TR or SD103B-TAP SD103B Single diode Tape and reel/ammopack
SD103C V
R
= 20 V SD103C-TR or SD103C-TAP SD103C Single diode Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Peak inverse voltage
SD103A V
R
40 V
SD103B V
R
30 V
SD103C V
R
20 V
Power dissipation (infinite heat sink)
(1)
P
tot
400 mW
Peak forward surge current t
p
= 300 μs square pulse I
FSM
15 A
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
310 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
-55 to +150 °C
SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 09-Dec-15
2
Document Number: 85754
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 50 μA
SD103A V
(BR)
40 V
SD103B V
(BR)
30 V
SD103C V
(BR)
20 V
Leakage current
V
R
= 30 V SD103A I
R
A
V
R
= 20 V SD103B I
R
A
V
R
= 10 V SD103C I
R
A
Forward voltage drop
I
F
= 20 mA V
F
370 mV
I
F
= 200 mA V
F
600 mV
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
50 pF
Reverse recovery time
I
F
= I
R
= 50 mA to 200 mA,
recover to 0.1 I
R
t
rr
10 ns
I
F
- Forward Current (mA)
0 100 200 300 400 500 600 700 800 900 1000
V
F
- Forward Voltage (mV)
16765
1000
100
10
1
0.1
0.01
0.001
I
F
- Forward Current (A)
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0
V
F
- Forward Voltage (V)
16766
1
10
100
1000
10 000
20 40 60 800 100 120 140 160
T
j
- Junction Temperature (°C)
16767
I
R
- Reverse Current (µA)
0
5
10
15
20
25
30
0 1015202530
V
R
- Reverse Voltage (V)
16768
C
D
- Diode Capacitance (pF)
f = 1 MHz
5
SD103A, SD103B, SD103C
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 09-Dec-15
3
Document Number: 85754
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Non-Repetitive Forward Surge Current vs.
Pulse Width
PACKAGE DIMENSIONS in millimeters (inches): DO-35
0
5
10
15
20
25
0.1 1.0 10.0
t
P
- Pulse width (ms)
16769
I
tot
- Typ. Non Repetitve
Forward Surge Current (A)
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]

SD103C-TAP

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 5uA 20 Volt 15A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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