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STK822

P1-P3P4-P6P7-P9P10-P12P13-P15
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Electrical characteristics STK822
4/15
2 Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 4. On/off
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1 mA, V
GS
= 0
25 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 20 V
V
DS
= 20 V, Tc = 125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±16 V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
12.5V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 19 A
V
GS
= 4.5 V, I
D
= 19 A
0.00175
0.0022
0.00215
0.003
Ω
Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f=1 MHz, V
GS
=0
6060
1366
136
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=12.5 V, I
D
= 38 A
V
GS
= 4.5 V
(see Figure 14)
33
13.2
11.3
nC
nC
nC
Q
gs1
Q
gs2
Pre V
th
gate-to-source
charge
Post V
th
gate-to-source
charge
V
DD
=12.5 V, I
D
= 12 A
V
GS
= 4.5 V
(see Figure 19)
8
5.2
nC
nC
R
G
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
1.1 Ω
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STK822 Electrical characteristics
5/15
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 12.5 V, I
D
= 19 A,
R
G
= 4.7 Ω, V
GS
= 4.5 V
(see Figure 16)
30.7
60
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
=15 V, I
D
= 19 A,
R
G
= 4.7 Ω, V
GS
= 4.5 V
(see Figure 16)
43.5
13
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by package
Source-drain current
Source-drain current
(pulsed)
38
152
A
A
V
SD
(2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 19 A, V
GS
=0
1.2 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 38 A, di/dt = 100 A/µs,
V
DD
= 20 V, Tj = 150 °C
(see Figure 15)
41
45
2.2
ns
nC
A
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Electrical characteristics STK822
6/15
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B
VDSS
vs. temperature Figure 7. Static drain-source on resistance
5 101520253035
I
D(A)
1
2
3
4
R
DS(on)
(mΩ)
HV41090
P1-P3P4-P6P7-P9P10-P12P13-P15

STK822

Mfr. #:
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Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 25V 38A POLARPAK
Lifecycle:
New from this manufacturer.
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