IXYS reserves the right to change limits, test conditions, and dimensions.
IXTF250N075T
Notes: 1. Pulse test: t ≤ 300 μs, duty cycled ≤ 2 %;
2. Drain and Source Kelvin contacts must be located less than 5 mm
from the plastic body.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 60 A, Note 1 75 122 S
C
iss
9900 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1330 pF
C
rss
285 pF
t
d(on)
32 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 50 A 50 ns
t
d(off)
R
G
= 3.3 W (External) 58 ns
t
f
45 ns
Q
g(on)
200 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 50 nC
Q
gd
60 nC
R
thJC
0.75 °C/W
R
thCH
0.15 °C/W
Source-Drain Diode Characteristic Values
T
J
= 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 150 A
I
SM
Pulse width limited by T
JM
560 A
V
SD
I
F
= 50 A, V
GS
= 0 V, Note 1 1.0 V
t
rr
I
F
= 25 A, -di/dt = 100 A/μs50ns
V
R
= 25 V, V
GS
= 0 V
ISOPLUS i4-Pak
TM
(5-Lead)
(IXTF) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
Leads:
1. Gate;
2, 3.
Source;
4, 5. Drain
6. Isolated.
All leads and tab are tin plated.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
