V
RRM
= 20 V - 100 V
I
F
= 200 A
Features
• High Surge Capability Three Tower Package
• Types up to 100 V V
RRM
• Isolation Type Package
Parameter Symbol MBRT20045 (R) MBRT20060 (R) Unit
Re
etitive
eak reverse volta
e
V
RRM
45 60 V
Conditions
100
MBRT20045 thru MBRT200100R
MBRT200100 (R)
80
MBRT20080 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
Diode
RMS reverse voltage
V
RMS
32 42 V
DC blocking voltage
V
DC
45 60 V
Continuous forward current
I
F
200 200 A
Operating temperature
T
j
-40 to 150 -40 to 150 °C
Storage temperature
T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MBRT20045 (R) MBRT20060(R) Unit
Diode forward voltage 0.75 0.8
11
20 20
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
0.18 0.18 °C/W
-40 to 150 -40 to 150
C
= 25 °C, t
p
= 8.3 m
70
10080
-40 to 175
MBRT200100 (R)
11
MBRT20080 (R)
0.18
V
R
= 20 V, T
j
= 125 °C
0.18
0.88 0.88
20
mA
V
V
R
= 20 V, T
j
= 25 °C
I
F
= 100 A, T
j
= 25 °C
T
C
≤ 125 °C
Conditions
57
1500 1500
-40 to 175
200 200
1500
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
20
A1500
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