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NSR201MXT5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
January, 2018 − Rev. 0
1 Publication Order Number:
NSR201MX/D
NSR201MX
Schottky Barrier Diode
for Mixer and Detector
This Schottky Barrier Diode is designed for high frequency
application. It can be used widely for power detector of C Band and
Mixer of Ku Band etc. X2DFN2 package is suitable for compact and
efficient designs
Features
• Small Interterminal Capacitance
• Less Parasitic Components
• Small Forward Voltage
• Small−sized Package
• Pb−Free, Halogen Free and RoHS compliance
Typical Applications
• Microwave and Submilliwave Mixer
• Microwave and Submilliwave Power Detector
Specifications
Table 1. ABSOLUTE MAXIMUM RATINGS
at T
A
= 25°C
Parameter Symbol Value Unit
Reverse Voltage V
R
2 V
Forward Current I
F
50 mA
Operating Junction
and Storage Temperature
T
J,
T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
MARKING DIAGRAMS
X2DFN2 1.0 x 0.6, 0.65P
CASE 714AB
RF M
G
RF = Specific Device Code
M = Date Code
G = Pb−Free Package
2 V, 50 mA
C = 0.15 pF typ.
Schottky Barrier Diode
SCALE 8:1
ELECTRICAL CONNECTION
Cathode
Anode
1
NSR201MX
CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
www.onsemi.com
2
Table 2. ORDERING INFORMATION
Device
Marking Package Shipping†
NSR201MXT5G RF X2DFN2 1.0 x 0.65 P
(Pb−Free / Halogen Free)
8,000 / Tape & Real
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
Table 3. ELECTRICAL CHARACTERISTICS at T
A
= 25°C (Notes 1, 2)
Parameter Symbol Conditions
Value
Units
Min Typ Max
Reverse Voltage V
R
I
R
= 10 μA 2 V
Forward Voltage V
F
I
F
= 1 mA 320 mA
Series Resistance R
S
I
F
= 10 mA 14 18 Ω
Interterminal Capacitance C V
R
= 0 V, f = 1 MHz 0.15 0.20 pF
1. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
NSR201MX
CONFIDENTIAL AND PROPRIETARY
NOT FOR PUBLIC RELEASE
www.onsemi.com
3
Figure 1.
I
F
− V
F
Forward Current, I
F
− mA
10
T
A
= 25°C
7
5
3
2
1.0
0.1
0.01
0.001
7
5
3
2
7
5
3
2
7
5
3
2
0.1 0.2 0.3 0.4 0.50
I
F
− V
F
10
T
A
= 25°C
7
5
3
2
0.1
0.01
7
5
3
2
7
5
3
2
7
5
3
2
0.1 0.2 0.3 0.4 0.5
Forward Voltage, V
F
− V
IT18041
10
7
5
3
2
1.0
0.1
7
5
3
2
7
5
3
2
7
5
3
2
0
0.01
0.001
0.5 1.0 1.5 2.0 2.5
T
A
= 25°C
Reverce Current, I
R
− μA
Reverce Voltage, V
R
− V
IT18043
I
R
− V
R
C − V
R
T
A
= 25°C
f = 1 MHz
1.0
0.1
7
5
3
2
0.01
7
5
3
2
0
0.5 1.0 1.5 2.0
Reverce Voltage, V
R
− V
IT18045
Interterminal Capacitance, C − pF
100
1.0
0.1
0.001
Reverce Current, I
R
− μA
0.0001
10
0.01
Ambient Temperature, T
A
− °C
IT18044
−100 −50 0 50 100 150 200
Forward Voltage, V
F
− V
Ambient Temperature, T
A
− °C
0.6
0.5
0.4
0.3
0.2
0.1
0
−100 −50 0 50 100 150 200
I
R
− T
A
V
F
− T
A
10 mA
1 mA
100 μA
IT18042
P1-P3P4-P5

NSR201MXT5G

Mfr. #:
Buy NSR201MXT5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers RF SCHOTTKY BARRIER DIODE
Lifecycle:
New from this manufacturer.
Delivery:
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