1;3 Semiconductors Product specification
Triacs BTA216B series B
high commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
R
th j-a
Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current
2
V
D
= 12 V; I
T
= 0.1 A
T2+ G+ 2 18 50 mA
T2+ G- 2 21 50 mA
T2- G- 2 34 50 mA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A
T2+ G+ - 31 60 mA
T2+ G- - 34 90 mA
T2- G- - 30 60 mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A - 31 60 mA
V
T
On-state voltage I
T
= 20 A - 1.2 1.5 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 0.7 1.5 V
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C 0.25 0.4 - V
I
D
Off-state leakage current V
D
= V
DRM(max)
; T
j
= 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C; 1000 4000 - V/μs
off-state voltage exponential waveform; gate open circuit
dI
com
/dt Critical rate of change of V
DM
= 400 V; T
j
= 125 ˚C; I
T(RMS)
= 16 A; - 28 - A/ms
commutating current without snubber; gate open circuit
t
gt
Gate controlled turn-on I
TM
= 20 A; V
D
= V
DRM(max)
; I
G
= 0.1 A; - 2 - μs
time dI
G
/dt = 5 A/μs
2 Device does not trigger in the T2-, G+ quadrant.
October 1997 2 Rev 1.100