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Document Number: 72669
S-71661-Rev. E, 06-Aug-07
Vishay Siliconix
SUD50N04-09H
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
40
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
3.4 5.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
1
µA
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175 °C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.0072 0.009
Ω
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
0.014
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
0.018
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 15 A
20 57 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3700
pFOutput Capacitance
C
oss
340
Reverse Transfer Capacitance
C
rss
175
Total Gate Charge
c
Q
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 50 A
55 85
nC
Gate-Source Charge
c
Q
gs
19
Gate-Drain Charge
c
Q
gd
13
Gate Resistance
R
g
1.3 Ω
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 20 V, R
L
= 0.4 Ω
I
D
≅ 50 A, V
GEN
= 10 V, R
g
= 2.5 Ω
12 20
ns
Rise Time
c
t
r
20 30
Turn-Off Delay Time
c
t
d(off)
35 55
Fall Time
c
t
f
11 20
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
b
Continuous Current
I
S
50
A
Pulsed Current
I
SM
100
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V
0.90 1.50 V
Reverse Recovery Time
t
rr
I
F
= 30 A, di/dt = 100 A/µs
30 45 ns
