APT90DR160HJ

APT90DR160HJ
APT90DR160HJ – Rev 1 October, 2012
www.microsemi.com
1-4
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
R
Maximum DC reverse Voltage
V
RRM
Maximum Peak Repetitive Reverse Voltage
1600 V
I
F
DC Forward Current T
C
= 90°C 80
I
FSM
Non-Repetitive Forward Surge Current t=10ms
T
J
= 45°C
850
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
V
RRM
= 1600V
I
F
= 90A @ Tc = 80°C
Application
Input mains rectifier
Features
Planar double passivated chips
High blocking voltage
High current
Low leakage current
Very low stray inductance
High level of integration
ISOTOP
®
Package (SOT-227)
Benefits
Outstanding performance at high frequency
operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
ISOTOP
®
Rectifier diode
full bridge Power Module
~
~
-
+
APT90DR160HJ
APT90DR160HJ – Rev 1 October, 2012
www.microsemi.com
2-4
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C
50 µA
I
R
Reverse Current V
R
= 1600V
T
j
= 125°C
4 mA
T
j
= 25°C
1.3
V
F
Forward Voltage I
F
= 90A
T
j
= 125°C
1.1
V
V
T
On – state Voltage 0.8 V
r
T
On – state Slope resistance
4.8 m
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
thJC
Junction to Case Thermal resistance 0.85
R
thJA
Junction to Ambient 20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
2500 V
T
J
,T
STG
Storage Temperature Range -55 150
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec 300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2
g
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992
)
25.4 (1.000
)
1.95 (.077)
2.14 (.084)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
3.30 (.130)
4.57 (.180)
APT90DR160HJ
APT90DR160HJ – Rev 1 October, 2012
www.microsemi.com
3-4
Typical Performance Curve
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
Thermal Impedance (°C/W)
Forward Characteristic
T
J
=25°C
T
J
=125°C
0
30
60
90
120
150
180
0.0 0.4 0.8 1.2 1.6 2.0
V
F
(V)
I
F
(A)
Non-Repetitive Forward Surge Current
T
J
=45°C
T
J
=125°C
0
200
400
600
800
1000
0.01 0.1
t (s)
I
FSM
(A)
50Hz
80% V
RRM
ISOTOP® is a registered trademark of ST Microelectronics NV

APT90DR160HJ

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power Module - Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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