MMT05B350T3G

© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 2
1 Publication Order Number:
MMT05B350T3/D
MMT05B350T3
Preferred Devices
Product Preview
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled
Temperature Environments
The MMT05B350T3 is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 and
K.21, IEC 950, UL 1459 and 1950 and FCC Part 68
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Recognized − File #E210057
Pb−Free Package is Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Off−State Voltage − Maximum V
DM
300 V
Maximum Pulse Surge Short Circuit Current
Non−Repetitive Double Exponential Decay
Waveform (−25°C Initial Temperature)
(Notes 1 and 2)
2 x 10 msec
8 x 20 msec
10 x 160 msec
10 x 360 msec
10 x 560 msec
10 x 700 msec
10 x 1000 msec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
I
PPS5
I
PPS6
I
PPS7
±150
±150
±100
±100
±70
±70
±50
A(pk)
Non−Repetitive Peak On−State Current
60 Hz Full Sign Wave
I
TSM
32 A(pk)
Maximum Non−Repetitive Rate of Change of
On−State Current Exponential Waveform, < 100 A
di/dt "300
A/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
BIDIRECTIONAL TSPD
50 AMP SURGE, 350 VOLTS
Device Package Shipping
ORDERING INFORMATION
MMT05B350T3 SMB 12 mm Tape & Ree
l
(2.5 K/Reel)
MT1 MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
(
)
MARKING DIAGRAMS
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMT05B350T3G SMB
(Pb−Free)
12 mm Tape & Ree
l
(2.5 K/Reel)
A = Assembly Location
Y = Year
WW = Work Week
RPBM = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
AYWW
RPBM G
G
MMT05B350T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Operating Temperature Range Blocking or Conducting State T
J1
40 to +125 °C
Overload Junction Temperature − Maximum Conducting State Only T
J2
+175 °C
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Symbol Min Typ Max Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, I
SC
= 1.0 A, Vdc = 1000 V)
(+65°C)
V
(BO)
400
412
V
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 kW, t = 0.5 cycle) (Note 3)
(+65°C)
V
(BO)
400
412
V
Breakover Voltage Temperature Coefficient dV
(BO)
/dT
J
0.12 V/°C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities V
(BR)
350 V
Off State Current (V
D1
= 50 V) Both polarities
Off State Current (V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
mA
On−State Voltage (I
T
= 1.0 A)
(PW 300 ms, Duty Cycle 2%) (Note 3)
V
T
1.6 3.0 V
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 kW)
Both polarities
I
BO
475 mA
Holding Current (Both polarities) (Note 3)
V
S
= 500 V; I
T
(Initiating Current) = "1.0 A (+65°C)
I
H
150
130
270
mA
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25°C)
dv/dt 2000
V/ms
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
C
O
14
27
18
30
pF
3. Measured under pulse conditions to reduce heating.
+ Current
+ Voltage
V
TM
V
(BO)
I
(BO)
I
D2
I
D1
V
D1
V
D2
V
(BR)
I
H
Symbol Parameter
I
D1
, I
D2
Off State Leakage Current
V
D1
, V
D2
Off State Blocking Voltage
V
BR
Breakdown Voltage
V
BO
Breakover Voltage
I
BO
Breakover Current
I
H
Holding Current
V
TM
On State Voltage
Voltage Current Characteristic of TSPD
(Bidirectional Device)
MMT05B350T3
http://onsemi.com
3
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
I
D1
, OFF−STATE CURRENT (mA)
Figure 1. Typical Off−State Current versus
Temperature
TEMPERATURE (°C)
14012010080600−40−60
100
10
1.0
0.1
0.01
Figure 2. Typical Breakdown Voltage versus
Temperature
TEMPERATURE (°C)
V
D1
= 50V
0−60 140
390
380
370
360
350
340
320
400
−40 20
−20 20 40
−20 40 12010060 80
0.001
330
440
430
420
410
400
380
390
CURRENT (A)
I
PP
− PEAK PULSE CURRENT − %I
PP
I
H
, Holding Current (mA)
V
BO
, BREAKOVER VOLTAGE (VOLTS)
Figure 3. Maximum Breakover Voltage versus
Temperature
Figure 4. Typical Holding Current versus
Temperature
TEMPERATURE (°C)
−40
100
TEMPERATURE (°C)
40060 140
TIME (sec)
10000
0
100010010
420
320
220
Figure 5. Exponential Decay Pulse Waveform Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
−40
20
20 60 12010080
550
500
400
300
200
20 0 20 40 60 80 100 120
TIME (ms)
0
50
0
100
t
r
= rise time to peak value
t
f
= decay time to half value
t
r
t
f
Peak
Value
Half Value
240
260
280
300
380
400
340
360
450
350
250
150
600

MMT05B350T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
THYRISTOR 300V 150A DO214AA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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