OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SSM3J356R,LF

P1-P3P4-P6P7-P9
SSM3J356R
1
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM3J356R
SSM3J356R
SSM3J356R
SSM3J356R
Start of commercial production
2015-09
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Power Management Switches
2.
2.
2.
2. Features
Features
Features
Features
(1) 4 V gate drive voltage.
(2) Low drain-source on-resistance
: R
DS(ON)
= 400 mΩ (max) (@V
GS
= -4.0 V)
R
DS(ON)
= 300 mΩ (max) (@V
GS
= -10 V)
(3) AEC-Q101 qualified (Note 1)
Note 1: For detail information, please contact to our sales.
3.
3.
3.
3. Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
SOT-23F
1: Gate
2: Source
3: Drain
2016-05-18
Rev.2.0
©2016 Toshiba Corporation
SSM3J356R
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Channel temperature
Storage temperature
(t ≤ 10 s)
(Note 1)
(Note 1), (Note 2)
(Note 3)
(Note 3)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
-60
-20/+10
-2
-6
1
2
150
-55 to 150
Unit
V
A
W
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm
2
)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, R
th(ch-a)
, and the drain power dissipation, P
D
, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2016-05-18
Rev.2.0
©2016 Toshiba Corporation
SSM3J356R
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 2)
(Note 2)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
|Y
fs
|
Test Condition
V
GS
= -16 V/+10 V, V
DS
= 0 V
V
DS
= -60 V, V
GS
= 0 V
I
D
= -1 mA, V
GS
= 0 V
I
D
= -1 mA, V
GS
= 10 V
V
DS
= -10 V, I
D
= -1 mA
I
D
= -1.0 A, V
GS
= -4.0 V
I
D
= -1.0 A, V
GS
= -4.5 V
I
D
= -1.0 A, V
GS
= -10 V
V
DS
= -10 V, I
D
= -1 A
Min
-60
-50
-0.8
Typ.
280
270
240
4.7
Max
±10
-10
-2.0
400
360
300
Unit
µA
µA
V
V
mΩ
S
Note 1: If a reverse bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
on
t
off
Test Condition
V
DS
= -10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= -30 V, I
D
= -1.0 A
V
GS
= 0 to -4.5 V, R
G
= 10 Ω
Duty ≤ 1 %, V
IN
: t
r
, t
f
< 5 ns,
Common source, See Chapter 5.3.
Min
Typ.
330
25
40
29
48
Max
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
= -48 V, V
GS
= -10 V,
I
D
= -2.0 A
Min
Typ.
8.3
0.8
1.7
Max
Unit
nC
2016-05-18
Rev.2.0
©2016 Toshiba Corporation
P1-P3P4-P6P7-P9

SSM3J356R,LF

Mfr. #:
Buy SSM3J356R,LF
Manufacturer:
Toshiba
Description:
MOSFET Small-signal MOSFET ID: -2A, VDSS: -60V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet