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MPS6521G

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
1 Publication Order Number:
MPS6521/D
MPS6521 (NPN)
MPS6523 (PNP)
MPS6521 is a Preferred Device
Amplifier Transistors
Features
• Voltage and Current are Negative for PNP Transistors
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol NPN PNP Unit
Collector−Emitter Voltage
MPS6521
MPS6523
V
CEO
25
−
−
25
Vdc
Collector−Base Voltage
MPS6521
MPS6523
V
CBO
40
−
−
25
Vdc
Emitter−Base Voltage V
EBO
4.0 Vdc
Collector Current − Continuous I
C
100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
(Printed Circuit Board Mounting)
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MPS6521RLRA TO−92 2000/Tape & Ree
l
MPS6521RLRAG TO−92
(Pb−Free)
2000/Tape & Ree
l
Device Package Shipping
†
MPS6521 TO−92 5000 Units/Box
MPS6521G TO−92
(Pb−Free)
5000 Units/Box
MPS652x = Device Code
x = 1 or 3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
Preferred devices are recommended choices for future use
and best overall value.
ORDERING INFORMATION
TO−92
CASE 29−11
STYLE 1
1
2
3
MARKING
DIAGRAM
MPS
652x
AYWW G
G
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
MPS6523 TO−92 5000 Units/Box
MPS6523G TO−92
(Pb−Free)
5000 Units/Box
MPS6521 (NPN) MPS6523 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 0.5 mAdc, I
B
= 0)
V
(BR)CEO
25 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
4.0 − Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0) MPS6521
(V
CB
= 20 Vdc, I
E
= 0) MPS6523
I
CBO
−
−
0.05
0.05
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 10 Vdc) MPS6521
(I
C
= 2.0 mAdc, V
CE
= 10 Vdc) MPS6521
(I
C
= 100 mAdc, V
CE
= 10 Vdc) MPS6523
(I
C
= 2.0 mAdc, V
CE
= 10 Vdc) MPS6523
h
FE
150
300
150
300
−
600
−
600
−
Collector−Emitter Saturation Voltage
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
− 0.5 Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 3.5 pF
Noise Figure
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, R
S
= 10 k W,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)
NF − 3.0 dB
Figure 1. Turn−On Time Figure 2. Turn−Off Time
NPN
MPS6521
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
C
S
< 4.0 pF*
10 k
+3.0 V
275
C
S
< 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
−0.5 V
<1.0 ns
10 < t
1
< 500 ms
DUTY CYCLE = 2%
+10.9 V
0
−9.1 V
< 1.0 ns
t
1
MPS6521 (NPN) MPS6523 (PNP)
http://onsemi.com
3
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
20
3.0
Figure 4. Noise Current
f, FREQUENCY (Hz)
2.0
10 20 50 100 200 500 1k 2k 5k 10k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
BANDWIDTH = 1.0 Hz
R
S
= 0
I
C
= 1.0 mA
100 mA
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
30 mA
BANDWIDTH = 1.0 Hz
R
S
≈∞
10 mA
300 mA
I
C
= 1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10k
NPN
MPS6521
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
Figure 5. Narrow Band, 100 Hz
I
C
, COLLECTOR CURRENT (mA)
500k
Figure 6. Narrow Band, 1.0 kHz
I
C
, COLLECTOR CURRENT (mA)
10
2.0 dB
BANDWIDTH = 1.0 Hz
R
S
, SOURCE RESISTANCE (OHMS)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Wideband
I
C
, COLLECTOR CURRENT (mA)
10
10 Hz to 15.7 kHz
R
S
, SOURCE RESISTANCE (OHMS)
Noise Figure is defined as:
NF + 20 log
10
ǒ
e
n
2
) 4KTR
S
) I
n
2
R
S
2
4KTR
S
Ǔ
1ń2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10
−23
j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
e
n
I
n
K
T
R
S
3.0 dB
4.0 dB
6.0 dB
10 dB
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
500k
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
1M
500k
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30 50 70 100 200 300 500 700 1k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
P1-P3P4-P6P7-P9P10-P11

MPS6521G

Mfr. #:
Buy MPS6521G
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 25V 0.1A TO92
Lifecycle:
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