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NTGS3455T1

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1 Publication Order Number:
NTGS3455T1/D
NTGS3455T1
MOSFET
−3.5 Amps, −30 Volts
P−Channel TSOP−6
Features
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
• Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−30 Volts
Gate−to−Source Voltage − Continuous V
GS
"20.0 Volts
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
t 10 μS)
Maximum Operating Power Dissipation
Maximum Operating Drain Current
R
θ
JA
P
d
I
D
I
DM
P
d
I
D
62.5
2.0
−3.5
−20
1.0
−2.5
°C/W
Watts
Amps
Amps
Watts
Amps
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (T
p
t 10 μS)
Maximum Operating Power Dissipation
Maximum Operating Drain Current
R
θ
JA
P
d
I
D
I
DM
P
d
I
D
128
1.0
−2.5
−14
0.5
−1.75
°C/W
Watts
Amps
Amps
Watts
Amps
Operating and Storage Temperature Range T
J
, T
stg
−55 to
150
°C
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), t t 5.0 seconds.
2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
sided), operating to steady state.
3
4
1256
P−Channel
TSOP−6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
GATE
DRAIN
SOURCE
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping
†
ORDERING INFORMATION
NTGS3455T1
TSOP−6 3000 Tape & Reel
TSOP−6
(Pb−Free)
3000 Tape & Reel
V
(BR)DSS
R
DS(on)
TYP I
D
Max
−30 V
100 mW @ −10 V
−3.5 A
1
455 M G
G
455 = Specific Device Code
M
= Date Code*
G = Pb−Free Package
Source
4
Drain
6
Drain
5
3
Gate
1
Drain
2
Drain
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
NTGS3455T1G
http://onsemi.com
NTGS3455T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Notes 3 & 4)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= −10 μA)
V
(BR)DSS
−30 − −
Vdc
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= −30 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= −30 Vdc, T
J
= 70°C)
I
DSS
−
−
−
−
−1.0
−5.0
μAdc
Gate−Body Leakage Current
(V
GS
= −20.0 Vdc, V
DS
= 0 Vdc)
I
GSS
− − −100
nAdc
Gate−Body Leakage Current
(V
GS
= +20.0 Vdc, V
DS
= 0 Vdc)
I
GSS
− − 100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250 μAdc)
V
GS(th)
−1.0 −1.87 −3.0
Vdc
Static Drain−Source On−State Resistance
(V
GS
= −10 Vdc, I
D
= −3.5 Adc)
(V
GS
= −4.5 Vdc, I
D
= −2.7 Adc)
R
DS(on)
−
−
0.094
0.144
0.100
0.170
W
Forward Transconductance
(V
DS
= −15 Vdc, I
D
= −3.5 Adc)
g
FS
− 6.0 −
mhos
DYNAMIC CHARACTERISTICS
Total Gate Charge
(V
DS
= −15 Vdc, V
GS
= −10 Vdc,
I
D
= −3.5 Adc)
Q
tot
− 9.0 13
nC
Gate−Source Charge Q
gs
− 2.5 −
Gate−Drain Charge Q
gd
− 2.0 −
Input Capacitance
(V
DS
= −5.0 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 480 −
pF
Output Capacitance C
oss
− 220 −
Reverse Transfer Capacitance C
rss
− 60 −
SWITCHING CHARACTERISTICS
Turn−On Delay Time
(V
DD
= −20 Vdc, I
D
= −1.0 Adc,
V
GS
= −10 Vdc, R
g
= 6.0 W)
t
d(on)
− 10 20
ns
Rise Time t
r
− 15 30
Turn−Off Delay Time t
d(off)
− 20 35
Fall Time t
f
− 10 20
Reverse Recovery Time (I
S
= −1.7 Adc, dl
S
/dt = 100 A/μs) t
rr
− 30 − ns
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage (I
S
= −1.7 Adc, V
GS
= 0 Vdc) V
SD
− −0.90 −1.2 Vdc
Diode Forward On−Voltage (I
S
= −3.5 Adc, V
GS
= 0 Vdc) V
SD
− −1.0 − Vdc
3. Indicates Pulse Test: P.W. = 300 μsec max, Duty Cycle = 2%.
4. Class 1 ESD rated − Handling precautions to protect against electrostatic discharge are mandatory.
NTGS3455T1
http://onsemi.com
3
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
10
0
16
6
20
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
0463251
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
2
0.3
0.25
0.2
0.15
0.1
0.05
0
34 6 10
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (Ω)
I
D
= −3.5 A
T
J
= 25°C
0.15
−I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (Ω)
08106412214
0.05
0.2
0
0.1
0.25
0.3
20
T
J
= 25°C
V
GS
= −4.5 V
V
GS
= −10 V
1.6
1.4
1.2
1
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
−50 50250−25 75 125100
I
D
= −3.5 A
V
GS
= −10 V
0.8
0.6
150
−100
100
500
700
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
0203015105
18
14
12
8
4
2
7
16 18
25
300
5 789
V
GS
= 0 V
T
J
= 25°C
C
oss
C
rss
C
iss
0
8
3
16
421
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
0
0.5
20
V
GS
= −5 V
V
GS
= −3 V
V
GS
= −6 V
V
GS
= −8 V
V
GS
= −7 V
V
GS
= −10 V
V
GS
= −9 V
T
J
= 25°C
V
GS
= −4 V
12
4
1.5 2.5 3.5
P1-P3P4-P5

NTGS3455T1

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Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 30V 2.5A 6-TSOP
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