This is information on a product in full production.
February 2016 DocID12154 Rev 3 1/13
STTH512
Ultrafast recovery - 1200 V diode
Datasheet - production data
Features
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
ECOPACK
®
2 compliant component for DPAK
on demand
Insulated package: TO-220FPAC
Insulated voltage: 2000 V
RMS
sine
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
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Table 1. Device summary
Symbol Value
I
F(AV)
5 A
V
RRM
1200 V
T
j
(max) 175 °C
V
F
(typ) 1.25 V
t
rr
(typ) 48 ns
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Characteristics STTH512
2/13 DocID12154 Rev 3
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.5 x I
F(AV)
+ 0.08 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise stated)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1200 V
I
F(RMS)
RMS forward current
TO-220AC / TO-220FPAC 30
A
DPAK 10
I
F(AV)
Average forward current, δ = 0.5, square
wave
TO-220AC / DPAK T
c
= 145° C
5A
TO-220FPAC T
c
= 105° C
I
FRM
Repetitive peak forward current t
p
= 5 µs, F = 5 kHz square 60 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 55 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AC / DPAK 2.5
°C/W
TO-220FPAC 5.8
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
5
µA
T
j
= 125° C 3 30
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 5 A
2.20
VT
j
= 125° C 1.30 2.00
T
j
= 150° C 1.25 1.90
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
DocID12154 Rev 3 3/13
STTH512 Characteristics
13
Table 5. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
95
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
48 70
I
RM
Reverse recovery current
I
F
= 5 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125 °C
11 16 A
S Softness factor
I
F
= 5 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125 °C
2
t
fr
Forward recovery time
I
F
= 5 A dI
F
/dt = 50 A/µs
V
FR
= 1.5 x V
Fmax
, T
j
= 25 °C
400 ns
V
FP
Forward recovery voltage
I
F
= 5 A, dI
F
/dt = 50 A/µs,
T
j
= 25 °C
9.5 V
Figure 1. Conduction losses versus average
current
Figure 2. Forward voltage drop versus forward
current
0
1
2
3
4
5
6
7
8
9
10
11
12
13
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
P(W)
T
δ
=tp/T
tp
I (A)
F(AV)
= 0.05δ
= 0.1δ
= 0.2δ
= 0.5δ
= 1δ
0
5
10
15
20
25
30
35
40
45
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I (A)
FM
V (V)
FM
T=25°C
(maximum values)
j
T=150°C
(maximum values)
j
T=150°C
(typical values)
j
Figure 3. Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
TO-220AC
DPAK
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
TO-220FPAC

STTH512FP

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers high voltage diode
Lifecycle:
New from this manufacturer.
Delivery:
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