KAF−16200
www.onsemi.com
8
Table 5. SPECIFICATIONS
Description Symbol Min Nom. Max Units Notes Verification Plan
Saturation Signal Ne
−
SAT
35 41 ke
−
Design
10
Charge to Voltage Conversion Q/V 31
mV/e
−
1 Design
10
Quantum Efficiency at Peak
Red
Green
Blue
QE
MAX
33
40
33
% Design
10
Quantum Efficiency at Peak − Mono QE
MAX
56 % Design
10
Photo Response Non-Linearity
(10−90% Nsat)
PRNL 4 10 % Die
9
Green difference (color devices only) Gr/Gb 2 4.4 % Die
9
Photo Response Non-Uniformity PRNU 10 25 %p−p 2 Die
9
Readout Dark Current (at 60°C) Jd 175 233 pA/cm
2
3 Die
9
Integration Dark Current (at 60°C) Jd 62 100 pA/cm
2
12 Die
9
Dark Signal Non-Uniformity DSNU 0.26 4 mV p−p 5 Die
9
Dark Signal Doubling Temperature
DT
4.7 °C 11 Design
10
Read Noise N
R
14 21 e
−
rms Die
9
Dynamic Range DR 69.3 dB 4 Design
10
Horizontal Charge Transfer Efficiency HCTE 0.999995 0.999999 5 Die
9
Vertical Charge Transfer Efficiency VCTE 0.999999 0.999999 Die
9
Blooming Protection X
AB
2000 x V
SAT
6 Design
10
DC Offset, Output Amplifier V
ODC
7.0 8.2 9.3 V 7 Die
9
Output Amplifier Bandwidth f
−3dB
220 MHz Design
10
Output Impedance, Amplifier R
OUT
100 124 145
W
Die
9
Reset Feedthru V
RFT
0.5 V Design
10
1. Increasing output load currents to improve bandwidth will decrease the conversion factor (Q/V).
2. Difference between the maximum and minimum average signal levels of 168 × 168 blocks within the sensor on a per color basis as a % of
average signal level.
3. Readout dark current is measured at T = 60°C, with t
INT
= 0, from the average non-illuminated signal with respect to the over-clocked
horizontal register signal.
4. 20log (Ne
−
SAT
/ N
R
). Specified at T = 60°C.
5. Measured per transfer above and below (∼70% V
SAT
min) saturation exposure levels. Typically, no degradation in HCCD CTE is observed
up to 24 MHz.
6. X
AB
is the number of times above the V
SAT
illumination level that the sensor will bloom by spot size doubling. The spot size is 10% of the
imager height. X
AB
is measured at 4 ms.
7. Video level offset with respect to ground.
8. Total dark signal = (V
DARK,INT
* t
INT
) + V
DARK,READ
* t
READOUT
.
9. A parameter that is measured on every sensor during production testing.
10.A parameter that is quantified during the design verification activity.
11. This value is valid only near 25°C.
12.Integration dark current is measured at T = 60°C, from the average non−illuminated signal signal with respect to the over−clocked vertical
register signal.
