FDC796N

February 2004
2004 Fairchild Semiconductor Corporation
FDC796N Rev D (W)
FDC796N
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Applications
DC/DC converter
Power management
Load switch
Features
12.5 A, 30 V. R
DS(ON)
= 9 m @ V
GS
= 10 V
R
DS(ON)
= 12 m @ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
Low gate charge
High power and current handling capability
Fast switching speed.
SuperSOT-6
TM
FLMP
S
S
S
G
S
S
3
2
1
4
5
6
Bottom Drain
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
± 20
I
D
Drain Current – Continuous (Note 1a) 12.5 A
Pulsed 40
Maximum Power Dissipation (Note 1a) 2 W
P
D
(Note 1b)
1.1
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 60
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b) 111
R
θJC
Thermal Resistance, Junction-to-Case
0.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.796 FDC796N 7’’ 8mm 3000 units
FDC796N
FDC796N Rev D (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
30 V
BVDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
25
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 10
µA
I
GSS
Gate–Body Leakage
V
GS
= ± 20 V, V
DS
= 0 V
±100
nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1 2 3 V
VGS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
– 5.6
mV/°C
R
DS(on)
Static Drain–Source
On Resistance
V
GS
= 10 V, I
D
= 12.5 A
V
GS
= 4.5 V, I
D
= 11 A
V
GS
= 10 V, I
D
= 12.5 A, T
J
=125°C
7.4
9.5
9
9
12
16
m
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 12.5 A 48.4 S
Dynamic Characteristics
C
iss
Input Capacitance 1444 pF
C
oss
Output Capacitance 342 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
135 pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 1.25
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 10 20 ns
t
r
Turn–On Rise Time 3.8 7.6 ns
t
d(off)
Turn–Off Delay Time 26 42 ns
t
f
Turn–Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
13 23 ns
Q
g
Total Gate Charge 14 20 nC
Q
gs
Gate–Source Charge 4 nC
Q
gd
Gate–Drain Charge
V
DS
= 15 V, I
D
= 12.5 A,
V
GS
= 5 V
5 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 1.5 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.5 A (Note 2) 0.73 1.2 V
t
rr
Diode Reverse Recovery Time 25 nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 12.5 A,
d
iF
/d
t
= 100 A/µs
15 nC
Notes: 1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 60°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 111°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC796N
FDC796N Rev D (W)
Typical Characteristics
0
10
20
30
40
50
00.511.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.0V
3.5V
V
GS
= 10V
4.5V
6.0V
4.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 1020304050
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.5V
6.0V
5.0V
4.5V
4.0V
10V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 12.5A
V
GS
= 10V
0.004
0.008
0.012
0.016
0.02
0.024
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 6.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1.522.533.54
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC796N

FDC796N

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V N-Ch PowerTrench
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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