IXFX64N60P Datasheet IXFK64N60P, IXFX64N60P | P1-P3

DS99442E(01/06)

PolarHV

TM

HiPerFET

Power MOSFET

V

DSS

= 600 V

I

D25

=64A

R

DS(on)

≤≤

≤ 96 m

ΩΩ

Ω

t

rr

≤≤

≤ 200 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

l

International standard packages

l

Fast recovery diode

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 3 mA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8 mA 3.0 5.0 V

I

GSS

V

GS

= ±30 V

DC

, V

DS

= 0 ±200 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 1000 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

, Note 1 96 m Ω

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 150° C 600 V

V

DGR

T

J

= 25° C to 150° C; R

GS

= 1 MΩ 600 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25° C64A

I

DM

T

C

= 25° C, pulse width limited by T

JM

150 A

I

AR

T

C

= 25° C64A

E

AR

T

C

= 25° C80mJ

E

AS

T

C

= 25° C 3.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 20 V/ns

T

J

≤ 150° C, R

G

= 2 Ω

P

D

T

C

= 25° C 1040 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 ° C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 ° C

F

C

Mounting force (PLUS247) 20..120/4.5..25 N/lb

M

d

Mounting torque (TO-264) 1.13/10 Nm/lb.in.

Weight TO-264 10 g

PLUS247 6 g

PLUS247 (IXFX)

G = Gate D = Drain

S = Source Tab = Drain

S

G

D

(TAB)

TO-264 (IXFK)

(TAB)

IXFK 64N60P

IXFX 64N60P

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFK 64N60P

IXFX 64N60P

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, Note 1 40 63 S

C

iss

12 nF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 1150 pF

C

rss

80 pF

t

d(on)

28 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

=0.5 I

D25

23 ns

t

d(off)

R

G

= 1 Ω (External) 79 ns

t

f

24 ns

Q

g(on)

200 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

70 nC

Q

gd

68 nC

R

thJC

0.12 ° C/W

R

thCS

0.15 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 64 A

I

SM

Repetitive 150 A

V

SD

I

F

= I

S

, V

GS

= 0 V, Note 1 1.5 V

t

rr

I

F

= 25A, -di/dt = 100 A/µs 200 ns

Q

RM

V

R

= 100V 0.6 µC

I

RM

6.0 A

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 247

TM

Outline

TO-264 Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

Notes:

1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXFK 64N60P

IXFX 64N60P

Fig. 1. Output Characteristics

@ 25ºC

0

5

10

15

20

25

30

35

40

45

50

55

60

65

01234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

0 2 4 6 8 101214161820

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 3. Output Characteristics

@ 125ºC

0

5

10

15

20

25

30

35

40

45

50

55

60

65

02468101214

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 32A vs.

Junction Temperature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 64A

I

D

= 32A

Fig. 5. R

DS(on)

Normalized to I

D

= 32A vs.

Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

3.2

0 20 40 60 80 100 120 140 160

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

10

20

30

40

50

60

70

-50-25 0 25 50 75100125150

T

J

- Degrees Centigrade

I

D

- Amperes

IXFX64N60P

IXFX64N60P

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