2SA1312
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1312
Audio Frequency Low Noise Amplifier Applications
• High voltage: V
CEO
= −120 V
• Excellent h
FE
linearity: h
FE
(I
C
= −0.1 mA)/ h
FE
(I
C
= −2 mA)
h= 0.95 (typ.)
• High h
FE:
h
FE
= 200 to 700
• Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz
• Complementary to 2SC3324
• Small package
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−120 V
Collector-emitter voltage V
CEO
−120 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−100 mA
Base current I
B
−20 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
Start of commercial production
1982-12
