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BUK7Y102-100B,115

P1-P3P4-P6P7-P9P10-P12P13-P15
BUK7Y102-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 7 April 2010 6 of 14
NXP Semiconductors
BUK7Y102-100B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
= 25 °C 100 - - V
I
D
=250µA; V
GS
=0V; T
j
= -55 °C 90 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
234V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--4.4V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 10
1--V
I
DSS
drain leakage current V
DS
=100V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
V
DS
=100V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=20V; T
j
= 25 °C - 2 100 nA
V
DS
=0V; V
GS
=-20V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=5A; T
j
= 175 °C;
see Figure 12; see Figure 13
- - 265 mΩ
V
GS
=10V; I
D
=5A; T
j
=25°C;
see Figure 12
; see Figure 13
- 86 102 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=5A; V
DS
=80V; V
GS
=10V;
see Figure 16
- 12.2 - nC
Q
GS
gate-source charge - 2.5 - nC
Q
GD
gate-drain charge - 4.7 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 14
- 584 779 pF
C
oss
output capacitance - 85 102 pF
C
rss
reverse transfer
capacitance
- 3852pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=6Ω; V
GS
=10V;
R
G(ext)
=10Ω
-11-ns
t
r
rise time - 4.8 - ns
t
d(off)
turn-off delay time - 25 - ns
t
f
fall time - 5.4 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=5A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=30V
-51-ns
Q
r
recovered charge - 122 - nC
BUK7Y102-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 7 April 2010 7 of 14
NXP Semiconductors
BUK7Y102-100B
N-channel TrenchMOS standard level FET
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 9. Forward transconductance as a function of
drain current; typical values.
003aad640
0
5
10
15
012345
V
DS
(V)
I
D
(A)
5.2
10
4.9
4.7
4.4
20
5.4
V
GS
(V) =
003aad641
0
100
200
300
400
500
0 5 10 15
I
D
(A)
R
DSon
(m
Ω
)
10
4.7
5.2
4.4 4.9
5.4
V
GS
(V) =
003aad642
0
5
10
15
0246
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
25
°
C
003aad647
0
2
4
6
8
10
0481216
I
D
(A)
g
fs
(S)
BUK7Y102-100B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 7 April 2010 8 of 14
NXP Semiconductors
BUK7Y102-100B
N-channel TrenchMOS standard level FET
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
(°C)
−60 180120060
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
03aa29
0
1
2
3
-60 0 60 120 180
T
j
(
°
C)
a
003aad648
50
100
150
200
250
300
4 8 12 16 20
V
GS
(V)
R
DSON
(m
Ω
)
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK7Y102-100B,115

Mfr. #:
Buy BUK7Y102-100B,115
Manufacturer:
Nexperia
Description:
MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET
Lifecycle:
New from this manufacturer.
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