PMEG2020CPA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 5 August 2010 3 of 15
NXP Semiconductors
PMEG2020CPA
2 A low V
F
dual MEGA Schottky barrier rectifier
[1] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[2] T
j
=25°C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[5] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[6] Soldering point of cathode tab.
Per device, one diode loaded
P
tot
total power dissipation T
amb
≤ 25 °C
[3][4]
-500mW
[3][5]
-960mW
[1][3]
- 1800 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device, one diode loaded
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
[3]
- - 250 K/W
[4]
- - 130 K/W
[5]
--70K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[6]
--12K/W
