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Document Number: 63482
S11-2380-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ904DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
=10V thru 4 V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.010
0.015
0.020
0.025
0.030
0.035
0 5 10 15 20 25 30
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
02468
V
DS
=24V
I
D
=7.8 A
V
DS
=15V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
100
200
300
400
500
600
0 5 10 15 20 25 30
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
=4.5V
V
GS
=10V
I
D
=7.8 A
T
J
-Junction Temperature (°C)
(Normalized)- On-ResistanceR
DS(on)