© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 3
1 Publication Order Number:
MPSA13/D
MPSA13, MPSA14
MPSA14 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CES
30 Vdc
Collector−Base Voltage V
CBO
30 Vdc
Emitter−Base Voltage V
EBO
10 Vdc
Collector Current − Continuous I
C
500 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
200 °C/mW
Thermal Resistance,
Junction−to−Case
R
q
JC
83.3 °C/mW
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAM
MPS
A1x
AYWWG
G
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
TO−92
(TO−226AA)
CASE 29−11
STYLE 1
COLLECTOR 3
BASE
2
EMITTER 1
