CAT130019TWI-GT3

CAT130xx
http://onsemi.com
7
Instructions, addresses, and write data are clocked into the
DI pin on the rising edge of the clock (SK). The DO pin is
normally in a high impedance state except when reading data
from the device, or when checking the ready/busy status
during a write operation. The serial communication protocol
follows the timing shown in Figure 3.
The ready/busy status can be determined after the start of
internal write cycle by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that the
device is ready for the next instruction. If necessary, the DO
pin may be placed back into a high impedance state during
chip select by shifting a dummy “1” into the DI pin. The DO
pin will enter the high impedance state on the rising edge of
the clock (SK). Placing the DO pin into the high impedance
state is recommended in applications where the DI pin and
the DO pin are to be tied together to form a common DI/O
pin. The Ready/Busy flag can be disabled only in Ready
state; no change is allowed in Busy state.
Read
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the CAT130xx will
come out of the high impedance state and, after sending an
initial dummy zero bit, will begin shifting out the data
addressed (MSB first). The output data bits will toggle on
the rising edge of the SK clock and are stable after the
specified time delay (t
PD0
or t
PD1
). The READ instruction
timing is illustrated in Figure 4.
For the CAT13004/08/16, after the initial data word has
been shifted out and CS remains asserted with the SK clock
continuing to toggle, the device will automatically
increment to the next address and shift out the next data word
in a sequential READ mode. As long as CS is continuously
asserted and SK continues to toggle, the device will keep
incrementing to the next address automatically until it
reaches to the end of the address space, then loops back to
address 0. In the sequential READ mode, only the initial data
word is preceeded by a dummy zero bit. All subsequent data
words will follow without a dummy zero bit.
Figure 3. Synchronous Data Timing
SK
DI
CS
OD
t
DIS
t
PD0,
t
PD1
t
CSMIN
t
CSS
t
DIS
t
DIH
t
SKHI
t
CSH
VALIDVALID
DATA VALID
t
SKLOW
Figure 4. Read Instruction Timing
SK
CS
DI
DO
t
CSMIN
STANDBY
t
HZ
HIGH-ZHIGH-Z
1
A
N
A
N-1
A
0
0
D
N
D
N-1
D
1
D
0
t
PD0
10
CAT130xx
http://onsemi.com
8
Erase/Write Enable and Disable
The CAT130xx powers up in the write disable state. Any
writing after powerup or after an EWDS (write disable)
instruction must first be preceded by the EWEN (write
enable) instruction. Once the write instruction is enabled, it
will remain enabled until power to the device is removed, or
the EWDS instruction is sent. The EWDS instruction can be
used to disable all CAT130xx write and erase instructions,
and will prevent any accidental writing or clearing of the
device. Data can be read normally from the device
regardless of the write enable/disable status. The EWEN and
EWDS instructions timing is shown in Figure 5.
Write
After receiving a WRITE command (Figure 6), address
and the data, the CS (Chip Select) pin must be deselected for
a minimum of t
CSMIN
. The falling edge of CS will start the
self clocking for autoclear and data store cycles on the
memory location specified in the instruction. The clocking
of the SK pin is not necessary after the device has entered the
self clocking mode. The ready/busy status of the CAT130xx
can be determined by selecting the device and polling the
DO pin. Since this device features AutoClear before write,
it is NOT necessary to erase a memory location before it is
written into.
Figure 5. EWEN/EWDS Instruction Timing
CS
DI
STANDBY
1 0
*
* ENABLE=11
DISABLE=00
SK
0
Figure 6. Write Instruction Timing
SK
CS
DI
DO
t
CSMIN
STANDBY
HIGH-Z
HIGH-Z
1
A
N
A
N-1
A
0
D
N
D
0
BUSY
READY
STATUS
VERIFY
t
SV
t
HZ
t
EW
01
CAT130xx
http://onsemi.com
9
Erase
Upon receiving an ERASE command and address, the CS
(Chip Select) pin must be deasserted for a minimum of
t
CSMIN
(Figure 7). The falling edge of CS will start the self
clocking clear cycle of the selected memory location. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAT130xx can be determined by selecting the device and
polling the DO pin. Once cleared, the content of a cleared
location returns to a logical “1” state.
Erase All
Upon receiving an ERAL command (Figure 8), the CS
(Chip Select) pin must be deselected for a minimum of
t
CSMIN
. The falling edge of CS will start the self clocking
clear cycle of all memory locations in the device. The
clocking of the SK pin is not necessary after the device has
entered the self clocking mode. The ready/busy status of the
CAT130xx can be determined by selecting the device and
polling the DO pin. Once cleared, the contents of all memory
bits return to a logical “1” state.
Figure 7. Erase Instruction Timing
SK
CS
DI
DO
STANDBY
HIGH-Z
HIGH-Z
1
A
N
A
N-1
BUSY READY
STATUS VERIFY
t
SV
t
HZ
t
EW
t
CS
A
0
11
Figure 8. ERAL Instruction Timing
SK
CS
DI
DO
STANDBY
t
CS
HIGH-Z
HIGH-Z
1
BUSY READY
STATUS VERIFY
t
SV
t
HZ
t
EW
00 01

CAT130019TWI-GT3

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Supervisory Circuits w/1k Microwire
Lifecycle:
New from this manufacturer.
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