NDP4060

NDP4060 Rev. C

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

Figure 6. Gate Threshold Variation with

Temperature.

Figure 5. Transfer Characteristics.

0 5 10 15 20 25 30

0.6

0.8

1

1.2

1.4

1.6

1.8

2

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

D

R , NORMALIZED

DS(on)

V = 6.0V

GS

9.0

10

7.0

8.0

20

12

0 5 10 15 20 25 30

0.5

1

1.5

2

2.5

3

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

T = 125°C

J

-55°C

D

V = 10 V

GS

25°C

R , NORMALIZED

DS(on)

2 4 6 8 10

0

5

10

15

20

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 10V

DS

GS

D

T = -55°C

J

25°C

125°C

-50 -25 0 25 50 75 100 125 150 175

0.6

0.7

0.8

0.9

1

1.1

1.2

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

I = 250µA

D

V = V

DS GS

J

V , NORMALIZED

th

0 1 2 3 4 5

0

5

10

15

20

25

30

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = 20V

GS

DS

D

6.0

5.0

7.0

8.0

10

12

9.0

-50 -25 0 25 50 75 100 125 150 175

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = 10 V

GS

I = 7.5 A

D

R , NORMALIZED

DS(ON)

NDP4060 Rev. C

Figure 7. Breakdown Voltage Variation with

Temperature.

Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

Figure 9. Capacitance Characteristics.

Figure 10. Gate Charge Characteristics.

Typical Electrical Characteristics (continued)

-50 -25 0 25 50 75 100 125 150 175

0.9

0.95

1

1.05

1.1

1.15

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

I = 250µA

D

BV , NORMALIZED

DSS

J

0.4 0.6 0.8 1 1.2 1.4

0.1

0.2

0.5

1

2

5

10

20

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V = 0V

GS

SD

S

0 5 10 15 20

0

5

10

15

20

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

g

GS

I = 15A

D

V = 12V

DS

24V

48V

1 2 3 5 10 20 30 60

30

50

100

200

300

500

700

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0V

GS

C

oss

C

rss

G

D

S

V

DD

R

L

V

V

IN

OUT

V

GS

DUT

R

GEN

Figure 11. Switching Test Circuit.

Figure 12. Switching Waveforms.

10%

50%

90%

10%

90%

90%

50%

V

IN

V

OUT

on off

d(off)

f

r

d(on)

t t

t

tt

t

INVERTED

10%

PULSE WIDTH

NDP4060 Rev. C

0 2 4 6 8 10

0

2

4

6

8

I , DRAIN CURRENT (A)

g , TRANSCONDUCTANCE (SIEMENS)

T = -55°C

J

25°C

D

FS

V = 15V

DS

125°C

0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000

0.01

0.02

0.03

0.05

0.1

0.2

0.3

0.5

1

t , TIME (ms)

TRANSIENT THERMAL RESISTANCE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 3.0 °C/W

θ

JC

θ

JC

θ

JC

T - T = P * R (t)

θ

JC

C

J

P(pk)

t

1

t

2

r(t), NORMALIZED EFFECTIVE

1

Figure 13. Transconductance Variation with

Drain Current and Temperature.

Figure 14. Maximum Safe Operating Area.

Typical Electrical Characteristics (continued)

Figure 15. Transient Thermal Response Curve.

1 2 5 10 30 50 70

0.5

1

2

10

20

50

70

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

D

DC

RDS(ON) LIMIT

DS

100us

1ms

10ms

50ms

V = 20V

SINGLE PULSE

R = 3 C/W

T = 25°C

GS

C

θ

JC

o

NDP4060

Mfr. #:

Manufacturer:

ON Semiconductor

Description:

MOSFET N-CH 60V 15A TO-220

Lifecycle:

New from this manufacturer.

Delivery:

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