APTDF450U60G
APTDF450U60G – Rev 2 October, 2012
www.microsemi.com
2-4
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
F
= 500A 1.4 1.8
I
F
= 1000A 1.7
V
F
Diode Forward Voltage
I
F
= 500A T
j
= 150°C 1.5
V
T
j
= 25°C 2500
I
RM
Maximum Reverse Leakage Current V
R
= 600V
T
j
= 150°C 5000
µA
C
T
Junction Capacitance V
R
= 200V 825 pF
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
t
rr1
I
F
=1A,V
R
=30V
di/dt = 15A/µs
T
j
= 25°C 60 75
t
rr2
T
j
= 25°C 90 115
t
rr3
Reverse Recovery Time
I
F
= 500A
V
R
= 350V
di/dt=1000A/µs
T
j
= 100°C 135 255
ns
t
fr1
T
j
= 25°C 135
t
fr2
Forward Recovery Time
T
j
= 100°C 135
ns
I
RRM1
T
j
= 25°C 35 50
I
RRM2
Reverse Recovery Current
T
j
= 100°C 55 70
A
Q
rr1
T
j
= 25°C 1575 2875
Q
rr2
Reverse Recovery Charge
T
j
= 100°C 3715 8925
nC
V
fr1
T
j
= 25°C 23
V
fr2
Forward Recovery Voltage
T
j
= 100°C 23
V
T
j
= 25°C 600
d
IM/dt
Rate of Fall of Recovery Current
I
F
= 500A
V
R
= 350V
di/dt=1000A/µs
T
j
= 100°C 400
A/µs
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
thJC
Junction to Case Thermal Resistance
0.08 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case
t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
To heatsink M5 2.5 3.5
Torque Mounting torque
For terminals M6 3 4
N.m
Wt Package Weight 250 g
