SIDC02D60F6
Edited by INFINEON Technologies, IMM PSD, L4314M, Edition 2.1, 09.03.2010
Fast switching diode
This chip is used for:
• power modules and discrete
devices
Features:
• 600V Emitter Controlled technology 70 µm
chip
• soft , fast switching
• low reverse recovery charge
• small temperature coefficient
Applications:
• SMPS, resonant applications,
drives
C
Chip Type V
R
I
F
Die Size Package
SIDC02D60F6
600V 3A 1.3 x 1.3 mm
2
sawn on foil
Mechanical Parameters
Raster size 1.3 x 1.3
Area total 1.69
Anode pad size 0.818 x 0.818
mm
2
Thickness 70 µm
Wafer size 150 mm
Max. possible chips per wafer 9156
Passivation frontside Photoimide
Pad metal 3200 nm AlSiCu
Backside metal
Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond Electrically conductive glue or solder
Wire bond
Al, ≤250µm
Reject ink dot size
∅ 0.65mm; max 1.2mm
Recommended storage environment
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
