2003 Dec 03 3
NXP Semiconductors Product data sheet
20 V, 1 A ultra low V
F
MEGA Schottky
barrier rectifier in SOD523 package
PMEG2010AEB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOD523 (SC-79) standard mounting conditions.
2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
3. Solder point of cathode tab.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage − 20 V
I
F
continuous forward current T
s
≤ 55 °C − 1.0 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ ≤ 0.5 − 3.5 A
I
FSM
non-repetitive peak forward current t = 8 ms square wave − 6 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature note 1 − 150 °C
T
amb
operating ambient temperature note 1 −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 2 400 K/W
R
th(j-s)
thermal resistance from junction to
soldering point
notes 2 and 3 75 K/W
