ON5088 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 3 — 12 December 2012 3 of 9
NXP Semiconductors
ON5088
NPN wideband silicon germanium RF transistor
5. Limiting values
[1] T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
7. Characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CB
collector-base voltage open emitter - 10 V
V
CE
collector-emitter voltage open base - 3.0 V
shorted base - 10 V
V
EB
emitter-base voltage open collector - 1.0 V
I
C
collector current - 40 mA
P
tot
total power dissipation T
sp
90 C
[1]
- 136 mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 440 K/W
Table 7. Characteristics
T
j
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base breakdown
voltage
I
C
=2.5A; I
E
=0mA 10--V
V
(BR)CEO
collector-emitter breakdown
voltage
I
C
=1mA; I
B
=0mA 3.0--V
I
C
collector current - 2540mA
I
CBO
collector-base cut-off current I
E
=0mA; V
CB
=4.5V - - 100 nA
h
FE
DC current gain I
C
=10mA; V
CE
= 2 V 160 280 400
C
CES
collector-emitter capacitance V
CB
= 2 V; f = 1 MHz - 268 - fF
C
EBS
emitter-base capacitance V
EB
= 0.5 V; f = 1 MHz - 400 - fF
C
CBS
collector-base capacitance V
CB
= 2 V; f = 1 MHz - 70 - fF
f
T
transition frequency I
C
=25mA; V
CE
=2V; f=2GHz; T
amb
=25C-55-GHz
G
p(max)
maximum power gain I
C
=25mA; V
CE
=2V; T
amb
=25C
[1]
f = 1.8 GHz - 27 - dB
f = 12 GHz - 13 - dB
s
21
2
insertion power gain I
C
=25mA; V
CE
=2V; T
amb
=25C
f = 1.8 GHz - 25.4 - dB
f = 12 GHz - 9.3 - dB
