VS-30CTQ0.0S-M3, VS-30CTQ0.0-1-M3 Series
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Vishay Semiconductors
Revision: 26-Feb-14
2
Document Number: 94934
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per device
I
F(AV)
50 % duty cycle at T
C
= 105 °C, rectangular waveform
30
A
per leg 15
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
V
RRM
applied
1000
10 ms sine or 6 ms rect. pulse 260
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1.50 A, L = 11.5 mH 13 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.50 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
15 A
T
J
= 25 °C
0.62
V
30 A 0.82
15 A
T
J
= 125 °C
0.56
30 A 0.71
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.80
mA
T
J
= 125 °C 45
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.39 V
Forward slope resistance r
t
8.47 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 720 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to 150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
3.25
°C/W
Maximum thermal resistance,
junction to case per package
1.63
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style D
2
PAK
30CTQ050S
30CTQ060S
Case style TO-262
30CTQ050-1
30CTQ060-1
