VS-20L15TS-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Jul-14
1
Document Number: 95734
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 20 A
FEATURES
• 125 °C T
J
operation (V
R
< 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC
®
-JESD47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The Schottky rectifier module has been optimized for ultra
low forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK)
I
F(AV)
20 A
V
R
15 V
V
F
at I
F
0.33 V
I
RM
max. 600 mA at 100 °C
T
J
max. 125 °C
E
AS
10 mJ
Diode variation Single die
Base
cathode
N/C Anode
1
3
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 20 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 700 A
V
F
19 A
pk
, T
J
= 125 °C (typical) 0.25 V
T
J
Range -55 to +125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS VS-20L15TS-M3 UNITS
Maximum DC reverse voltage V
R
T
J
= 100 °C 15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 85 °C, rectangular waveform 20
A
Maximum peak one cycle non-repetitive
surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
700
10 ms sine or 6 ms rect. pulse 330
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 6 mH 10 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
