MC74LVX573DWR2

MC74LVX573
http://onsemi.com
4
CAPACITIVE CHARACTERISTICS
Symbo
l
Parameter
T
A
= 25°C T
A
= −40 to 85°C
Unit
Min Typ Max Min Max
C
in
Input Capacitance 4 10 10 pF
C
out
Maximum 3−State Output Capacitance 6 pF
C
PD
Power Dissipation Capacitance (Note 2) 29 pF
2. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
/8 (per latch). C
PD
is used to determine the
no−load dynamic power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
NOISE CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns, C
L
= 50 pF, V
CC
= 3.3 V, Measured in SOIC Package)
Symbo
l
Characteristic
T
A
= 25°C
Unit
Typ Max
V
OLP
Quiet Output Maximum Dynamic V
OL
0.5 0.8 V
V
OLV
Quiet Output Minimum Dynamic V
OL
−0.5 −0.8 V
V
IHD
Minimum High Level Dynamic Input Voltage 2.0 V
V
ILD
Maximum Low Level Dynamic Input Voltage 0.8 V
TIMING REQUIREMENTS (Input t
r
= t
f
= 3.0 ns)
Symbo
l
Parameter Test Conditions
T
A
= 25°C T
A
= −40 to 85°C
Unit
Typ Limit Limit
t
w(h)
Minimum Pulse Width, LE V
CC
= 2.7 V
V
CC
= 3.3 ± 0.3 V
6.5
5.0
7.5
5.0
ns
t
su
Minimum Setup Time, D to LE V
CC
= 2.7 V
V
CC
= 3.3 ± 0.3 V
5.0
3.5
5.0
3.5
ns
t
h
Minimum Hold Time, D to LE V
CC
= 2.7 V
V
CC
= 3.3 ± 0.3 V
1.5
1.5
1.5
1.5
ns
MC74LVX573
http://onsemi.com
5
V
CC
GND
D
O
50%
50% V
CC
t
PLH
t
PHL
V
CC
GND
50%
LE
t
PLH
t
PHL
O
t
w
50% V
CC
Figure 2. Figure 3.
50%
50% V
CC
50% V
CC
O
t
PZL
t
PLZ
t
PZH
t
PHZ
VOL +0.3 V
VOL −0.3 V
V
CC
GND
HIGH
IMPEDANCE
HIGH
IMPEDANCE
O
OE
50%
D
LE
V
CC
V
CC
GND
GND
VALID
t
h
t
su
50%
Figure 4. Figure 5.
SWITCHING WAVEFORMS
*Includes all probe and jig capacitance
C
L
*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
*Includes all probe and jig capacitance
C
L
*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
CONNECT TO V
CC
WHEN
TESTING t
PLZ
AND t
PZL
.
CONNECT TO GND WHEN
TESTING t
PHZ
AND t
PZH
.
1 kW
TEST CIRCUITS
Figure 6. Propagation Delay Test Circuit Figure 7. 3−State Test Circuit
ORDERING INFORMATION
Device Package Shipping
MC74LVX573DWR2G SOIC−20
(Pb−Free)
1000 / Tape & Reel
MC74LVX573DTG TSSOP−20
(Pb−Free)
75 Units / Rail
MC74LVX573DTR2G TSSOP−20
(Pb−Free)
2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MC74LVX573
http://onsemi.com
6
PACKAGE DIMENSIONS
TSSOP−20
CASE 948E−02
ISSUE C
DIM
A
MIN MAX MIN MAX
INCHES
6.60 0.260
MILLIMETERS
B 4.30 4.50 0.169 0.177
C 1.20 0.047
D 0.05 0.15 0.002 0.006
F 0.50 0.75 0.020 0.030
G 0.65 BSC 0.026 BSC
H 0.27 0.37 0.011 0.015
J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC 0.252 BSC
M 0 8 0 8
____
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION:
MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH OR GATE BURRS
SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
110
1120
PIN 1
IDENT
A
B
−T−
0.100 (0.004)
C
D
G
H
SECTION N−N
K
K1
JJ1
N
N
M
F
−W−
SEATING
PLANE
−V−
−U−
S
U
M
0.10 (0.004) V
S
T
20X REFK
L
L/2
2X
S
U0.15 (0.006) T
DETAIL E
0.25 (0.010)
DETAIL E
6.40 0.252
--- ---
S
U0.15 (0.006) T
7.06
16X
0.36
16X
1.26
0.65
DIMENSIONS: MILLIMETERS
1
PITCH
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

MC74LVX573DWR2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC LATCH OCTAL D 3ST 20SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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