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BAW56TT1

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1 Publication Order Number:
BAW56TT1/D
BAW56TT1
Preferred Device
Dual Switching Diode
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Reverse Voltage V
R
70 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1), T
A
= 25°C
Derated above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
θ
JA
555 °C/W
Total Device Dissipation,
FR−4 Board (Note 2), T
A
= 25°C
Derated above 25°C
P
D
360
2.9
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
θ
JA
345 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
Device Package Shipping
†
ORDERING INFORMATION
BAW56TT1 SC−75/SOT−416
CASE 463
SC−75/SOT−416
STYLE 4
3000/Tape & Ree
l
MARKING DIAGRAM
1
Preferred devices are recommended choices for future use
and best overall value.
3
ANODE
CATHODE
1
2
CATHODE
BAW56TT1G 3000/Tape & Ree
l
SC−75/SOT−416
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
A1 M G
G
A1 = Specific Device Code
M = Date Code*
G = Pb−Free Package
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
http://onsemi.com
BAW56TT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100 mAdc)
V
(BR)
70 − Vdc
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc)
(V
R
= 70 Vdc, T
J
= 150°C)
I
R
−
−
−
30
2.5
50
mAdc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 2.0 pF
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 60 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
715
855
1000
1250
mVdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 100 W, I
R(REC)
= 1.0 mAdc) (Figure 1)
t
rr
− 6.0 ns
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAW56TT1
http://onsemi.com
3
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
1.75
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
0.75
C
D
, DIODE CAPACITANCE (pF)
246 8
I
F
, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
T
A
= −40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
I
R
, REVERSE CURRENT (μA)
Figure 5. Normalized Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
P1-P3P4-P4

BAW56TT1

Mfr. #:
Buy BAW56TT1
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 70V 200mA
Lifecycle:
New from this manufacturer.
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