BCX56
BCX56-10
BCX56-16
NPN
Plastic-Encapsulate
Transistors
Features
x Power Dissipation: P
CM
=0.5W (T
amb
=25к)
x Collector Current: I
CM
=1.0A
x Collector-Base Voltage: V
(BR)CBO
=100V
x Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL
Maximum Ratings
Symbol Rating Value Unit
V
CEO
Collector-Emitter Voltage 80 V
V
CBO
Collector-Base Voltage 100 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current DC 1.0 A
P
C
Collector Power Dissipation 0.5 W
T
J
Junction Temperature 150
O
C
T
STG
Storage Temperature -55 to +150
O
C
Electrical Characteristics @ 25
q
C Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
V
CBO
Collector-Base Voltage
(I
C
=100µAdc, I
E
=0)
100 --- --- Vdc
V
CEO
Collector-Emitter Voltage
(I
C
=10mAdc, I
B
=0)
80 --- --- Vdc
V
EBO
Emitter-Base Voltage
(I
E
=10µAdc, I
C
=0)
5.0 --- --- Vdc
I
CBO
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
--- --- 0.1
µAdc
I
EBO
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
--- --- 0.1
µAdc
h
FE(1)
DC Current Gain
(V
CE
=2.0Vdc, I
C
=150mAdc)
BCX56
BCX56-10
BCX56-16
63
63
100
---
---
---
250
160
250
---
h
FE(2)
DC Current Gain
(V
CE
=2.0Vdc, I
C
=5.0mAdc)
40 --- --- ---
h
FE(3)
DC Current Gain
(V
CE
=2.0Vdc, I
C
=500mAdc)
25 --- --- ---
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc,I
B
=50mAdc)
--- --- 0.5 Vdc
V
BE(sat)
Base-Emitter Voltage
(I
C
=500mAdc, V
CE
=2.0Vdc)
--- --- 1.0 Vdc
f
T
Transition Frequency
(V
CE
=100Vdc, I
C
=50mAdc,
f=100MHz)
130 --- --- MHz
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: B 2013/01/01
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
25
B
A
E
D
G
H
F
K
J
C
1.55
.061
REF.
123
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
H
alogen free available upon request by adding suffix "-HF"
•
