Characteristics STTH802C
2/9 DocID8723 Rev 3
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses, use the following equation:
P = 0.80 x I
F(AV)
+ 0.037 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at T
j
= 25 °C per diode, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
F(RMS)
Forward rms current 10 A
I
F(AV)
Average forward current,
= 0.5, square wave
T
c
= 155 °C Per diode 4
A
T
c
= 150 °C Per device 8
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
50 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature 175 °C
Table 3. Thermal resistances
Symbol Parameter Max. value Unit
R
th(j-c)
Junction to case
Per diode 4
°C/WTotal 2.5
R
th(c)
Coupling 1.0
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-4
µA
T
j
= 125 °C - 2 40
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 4 A
-1.10
V
T
j
= 125 °C - 0.81 0.95
T
j
= 25 °C
I
F
= 8 A
-1.25
T
j
= 125 °C - 0.95 1.10
1. Pulse test: t
p
= 5 ms, < 2%
2. Pulse test: t
p
= 380 µs, < 2%
